
4
Typical Parameters at T
A = 25°C (unless otherwise noted), Single Diode
Figure 2. RF Capacitance vs. Reverse
Bias, HSMP-3830 Series.
0.15
0.30
0.25
0.20
0.35
0.40
0.45
02
6
410 12
816
14
18 20
TOTAL
CAPACITANCE
(pF)
REVERSE VOLTAGE (V)
Figure 1. RF Capacitance vs. Reverse
Bias, HSMP-3810 Series.
Figure 3. Resistance at 25
°C vs.
Forward Bias Current.
1 MHz
30 MHz
frequency>100 MHz
0.15
0.30
0.25
0.20
0.35
02
6
410 12
816
14
18 20
TOTAL
CAPACITANCE
(pF)
REVERSE VOLTAGE (V)
1 GHz
100 MHz
1 MHz
10000
1000
100
10
1
0.1
RESISTANCE
(OHMS)
IF – FORWARD BIAS CURRENT (mA)
0.01
0.1
1
10
100
3000
1000
100
10
1
0.01
0.1
1
10
100
RF
RESISTANCE
(OHMS)
IF – FORWARD BIAS CURRENT (mA)
T
A = +85°C
T
A = +25°C
T
A = –55°C
10000
1000
100
10
1
RF
RESISTANCE
(OHMS)
0.01
0.1
1
10
100
IF – FORWARD BIAS CURRENT (mA)
T
A = +85°C
T
A = +25°C
T
A = –55°C
Figure 5. RF Resistance vs. Forward
Bias Current for HSMP-3810/
HSMP-4810.
1.4
1.2
1
0.8
0.6
0.4
0.2
0
10203040
50
VR – REVERSE VOLTAGE (V)
CAPACITANCE
(pF)
HSMP-382X
HSMP-3880
HSMP-3800
HSMP-3890
HSMP-381X
HSMP-3830
Figure 6. Capacitance vs. Reverse
Voltage.
Figure 4. RF Resistance vs. Forward
Bias Current for HSMP-3800.
120
110
100
90
80
70
60
50
40
1000
100
10
Diode Mounted as a
Series Attenuator
in a 50 Ohm Microstrip
and Tested at 123 MHz
DIODE RF RESISTANCE (OHMS)
Figure 7. 2nd Harmonic Input
Intercept Point vs. Diode RF
Resistance for Attenuator Diodes.
INPUT
INTERCEPT
POINT
(dBm)
HSMP-3810
HSMP-3830
120
115
110
105
100
95
90
85
110
30
IF – FORWARD BIAS CURRENT (mA)
Figure 8. 2nd Harmonic Input
Intercept Point vs. Forward Bias
Current for Switch Diodes.
INPUT
INTERCEPT
POINT
(dBm)
HSMP-3880
HSMP-3820
HSMP-3880
HSMP-3830
HSMP-3890
Diode Mounted as a
Series Attenuator in a
50 Ohm Microstrip and
Tested at 123 MHz
FORWARD CURRENT (mA)
Figure 9. Reverse Recovery Time vs.
Forward Current for Various Reverse
Voltages. HSMP-3820 Series.
T
rr
–
REVERSE
RECOVERY
TIME
(ns)
1
10
100
10
20
30
V
R = 2 V
V
R = 5 V
V
R = 10 V
HSMP-382X
HSMP-381x, /HSMP-4810
HSMP-382x, -4820
HSMP-383x, -386x