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參數(shù)資料
| 型號： | HSMBJ5951CE3TR |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | 齊納二極管 |
| 英文描述： | 120 V, 1.56 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 124K |
| 代理商： | HSMBJ5951CE3TR |
Microsemi
Scottsdale Division
Page 2
Copyright
2006
3-12-2006 REV G
WWW
.Microse
m
i
.CO
M
HSMBJ5913 thru HSMBJ5956, e3
SILICON 3.0 Watt ZENER DIODE
S C O T TS DALE DIVISION
HSMBJ5913-595
6B,e3
ELECTRICAL CHARACTERISTICS @ TL = 30oC
ZENER
VOLTAGE
VZ
TEST
CURRENT
IZT
DYNAMIC
IMPEDANCE
ZZT
KNEE
CURRENT
IZK
KNEE
IMPEDANCE
ZZK
REVERSE
CURRENT
IR (MAX.)
REVERSE
VOLTAGE
VR
MAX. DC
CURRENT
IZM
JEDEC
TYPE
NUMBER
Volts
mA
Ohms
mA
Ohms
μAdc
Volts
mA
HSMBJ5913
HSMBJ5914
HSMBJ5915
HSMBJ5916
HSMBJ5917
3.3
3.6
3.9
4.3
4.7
113.6
104.2
96.1
87.2
79.8
10
9.0
7.5
6.0
5.0
1.0
500
100
75
25
5.0
1.0
1.5
908
832
768
696
638
HSMBJ5918
HSMBJ5919
HSMBJ5920
HSMBJ5921
HSMBJ5922
5.1
5.6
6.2
6.8
7.5
73.5
66.9
60.5
55.1
50
4.0
2.0
2.5
3.0
1.0
0.5
350
250
200
400
5.0
2.0
3.0
4.0
5.2
6.0
588
534
482
440
400
HSMBJ5923
HSMBJ5924
HSMBJ5925
HSMBJ5926
HSMBJ5927
8.2
9.1
10
11
12
45.7
41.2
37.5
34.1
31.2
3.5
4.0
4.5
5.5
6.5
0.5
0.25
400
500
550
5.0
1.0
6.5
7.0
8.0
8.4
9.1
364
328
300
272
250
HSMBJ5928
HSMBJ5929
HSMBJ5930
HSMBJ5931
HSMBJ5932
13
15
16
18
20
28.8
25
23.4
20.8
18.7
7.0
9.0
10
12
14
0.25
550
600
650
1.0
9.9
11.4
12.2
13.7
15.2
230
200
183
166
150
HSMBJ5933
HSMBJ5934
HSMBJ5935
HSMBJ5936
HSMBJ5937
22
24
27
30
33
17
15.6
13.9
12.5
11.4
17.5
19
23
28
33
0.25
650
700
750
800
1.0
16.7
18.2
20.6
22.8
25.1
136
124
110
100
90
HSMBJ5938
HSMBJ5939
HSMBJ5940
HSMBJ5941
HSMBJ5942
36
39
43
47
51
10.4
9.6
8.7
8.0
7.3
38
45
53
67
70
0.25
850
900
950
1000
1100
1.0
27.4
29.7
32.7
35.8
38.8
82
76
68
62
58
HSMBJ5943
HSMBJ5944
HSMBJ5945
HSMBJ5946
HSMBJ5947
56
62
68
75
82
6.7
6.0
5.5
5.0
4.6
86
100
120
140
160
0.25
1300
1500
1700
2000
2500
1.0
42.6
47.1
51.2
56
62.2
52
48
44
40
36
HSMBJ5948
HSMBJ5949
HSMBJ5950
HSMBJ5951
HSMBJ5952
91
100
110
120
130
4.1
3.7
3.4
3.1
2.9
200
250
300
380
450
0.25
3000
3100
4000
4500
5000
1.0
69.2
76
83.6
91.2
98.8
32
30
26
24
22
HSMBJ5953
HSMBJ5954
HSMBJ5955
HSMBJ5956
150
160
180
200
2.5
2.3
2.1
1.9
600
700
900
1200
0.25
6000
6500
7000
8000
1.0
114
121.6
136.8
152
20
18
14
NOTES:
1.
No suffix indicates a +/-20% tolerance on nominal VZ. Suffix A denotes a +/-10% tolerance, B denotes a
+/-5% tolerance, C denotes a 2% tolerance, and D denotes a +/-1% tolerance.
2.
Zener voltage (VZ) is measured at TL = 30
oC and 90 seconds after application of dc current.
3.
The zener impedance is derived from the 60 Hz ac voltage, which results when an ac current having an rms
value equal to 10% of the dc zener current (IZT or IZK) is superimposed on IZT or IZK.
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相關(guān)PDF資料 |
PDF描述 |
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| HSMBJ5952AE3 | 130 V, 1.56 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA |
| HSMBJ5952ATR | 130 V, 1.56 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA |
| HSMBJ5954BE3 | 160 V, 1.56 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA |
| HA1705A-5% | 2.2 pF, 30 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
| HA1709B-5% | 4.7 pF, 30 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HSMBJ5952B | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SILICON 3.0W ZENER DIOCE |
| HSMBJ5953B | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SILICON 3.0W ZENER DIOCE |
| HSMBJ5954B | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SILICON 3.0W ZENER DIOCE |
| HSMBJ5955B | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SILICON 3.0W ZENER DIOCE |
| HSMBJ5956B | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SILICON 3.0W ZENER DIOCE |
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