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參數(shù)資料
| 型號(hào)： | HSMBJ5950B |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | SILICON 3.0W ZENER DIOCE |
| 中文描述： | 110 V, 1.56 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 80K |
| 代理商： | HSMBJ5950B |
MSC1299.PDF
ISO 9001 CERTIFIED
REV E 10/19/99
HSMBJ5913B thru HSMBJ5956B
NOTE 1:
No suffix indicates a ±20% tolerance on nominal VZ. Suffix A denotes a ±10% tolerance, B
denotes a ±5% tolerance, C denotes ±2% tolerance, and D denotes a ±1% tolerance. V
Z
is
measured with diode T
L
at 30°C and thermal equilibrium.
NOTE 2:
Zener impedance is derived from the 1 kHz ac voltage which results when an ac current having an
rms value equal to 10% of dc zener current (I
ZT
or I
ZK
) superimposed on I
ZT
or I
ZK
.
NOTE 3:
Based upon 3 W maximum power dissipation. Allowance has been made for the higher voltage
associated with higher currents and temperature. For determination of voltage change with
current deviations from I
ZT
see Micro Note 202.
T
L
Lead Temperature at Mounting Plane
P
d
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HSMBJ5952B | SILICON 3.0W ZENER DIOCE |
| HSMBJ5953B | SILICON 3.0W ZENER DIOCE |
| HSMBJ5954B | SILICON 3.0W ZENER DIOCE |
| HSMBJ5955B | SILICON 3.0W ZENER DIOCE |
| HSMBJ5956B | SILICON 3.0W ZENER DIOCE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HSMBJ5951B | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:SILICON 3.0W ZENER DIOCE |
| HSMBJ5952B | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:SILICON 3.0W ZENER DIOCE |
| HSMBJ5953B | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:SILICON 3.0W ZENER DIOCE |
| HSMBJ5954B | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:SILICON 3.0W ZENER DIOCE |
| HSMBJ5955B | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:SILICON 3.0W ZENER DIOCE |
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