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參數(shù)資料
| 型號： | HSCH-9161 |
| 英文描述： | Zero Bias Beamlead Detector Diode(零偏置粱式引線檢測二極管) |
| 中文描述： | 零偏置Beamlead探測器二極管（零偏置粱式引線檢測二極管） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 52K |
| 代理商： | HSCH-9161 |
Zero Bias Beamlead
Detector Diode
Technical Data
Features
Low J unction Capacitance
Lower Temperature
Coefficient than Silicon
Durable Construction—
Typical 6 gram beamlead
strength
Operation to 110 GHz
HSCH-9161
Description
Agilent’s HSCH-9161 detector
diode is a beamlead, GaAs device
fabricated using the modified
barrier integrated diode (MBID)
process
[1]
. This diode is designed
for zero bias detecting applica-
tions at frequencies through
110 GHz. It can be mounted in
ceramic microstrip (MIC), finline
and coplanar waveguide circuits.
Applications
At room temperature and frequen-
cies under 10 GHz, the silicon zero
bias Schottky detectors
HSMS-0005 and HSMS-2850 offer
comparable performance. How-
ever, the HSCH-9161 yields
virtually flat detection sensitivity
from 10 to 30 GHz with good
performance from 30 to 110 GHz.
In a wideband matched detector,
in which a shunt 50
resistor is
used in front of the diode, voltage
sensitivity (
γ
) is calculated to be
1 mV/
μ
W. Where a high-Q reactive
impedance matching network is
substituted for the shunt 50
resistor, values of
γ
approaching
25 mV/
μ
W can be expected.
In applications below 10 GHz
where DC bias is not available and
where temperature sensitivity is a
design consideration, the HSCH-
9161 offers superior stability when
compared to silicon zero bias
Schottky diodes.
Bonding and Handling
For more detailed information,
see Agilent Application Note 999,
“GaAs MMIC Assembly and
Handling Guidelines.”
[1] The diode structure and process are
covered by U.S. Patent No. 4,839,709
issued to Mark Zurakowski on June 13,
1989, and assigned to Agilent.
ALL DIMENSIONS IN MICRONS.
231
(9.1)
250
(9.8)
250
(9.8)
120
(4.7)
231
(9.1)
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