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參數資料
| 型號： | HSCH-5512 |
| 英文描述： | Beam Lead Silicon Schottky Diodes |
| 中文描述： | 梁鉛硅肖特基二極管 |
| 文件頁數： | 4/6頁 |
| 文件大?。?/td> | 127K |
| 代理商： | HSCH-5512 |
3-67
Typical Parameters
100
10
1
0.1
0.01
FORWARD VOLTAGE (V)
Figure 1. Typical Forward
Characteristics for Medium Barrier
Beam Lead Diodes. HSCH-5310 Series.
0
0.2
0.4
0.6
1.0
0.8
+125
°
C
+25
°
C
-55
°
C
100
10
1
0.1
0.01
FORWARD VOLTAGE (V)
Figure 2. Typical Forward
Characteristics for Low Barrier Beam
Lead Diodes. HSCH-5330, -5340 Series.
0
0.2
0.4
0.6
0.8
+125
°
C
+25
°
C
-55
°
C
Figure 3. Typical Noise Figure vs.
Frequency.
N
0
5.0
FREQUENCY (GHz)
16
20
7.5
6.0
5.5
4
2
8
26
6.5
7.0
28
12
24
0.15 pF
0.1 pF
0.25 pF
Figure 5. Typical Admittance Characteristics with External
Bias. HSCH-5340 and -5341.
Figure 4. Typical Admittance Characteristics with 1 mA Self
Bias. HSCH-5340 and -5341.
0.2
05
1
1
20
30
50
2
3
5
0.2
05
0
0
1
2
3
5
1
100
1
10
2
18
26 GHz
0.2
05
1
1
20
30
50
2
3
5
0.2
05
0
1
2
3
5
1
100
1
10
2
26 GHz
150
μ
A
50
μ
A
20
μ
A
0
20
相關PDF資料 |
PDF描述 |
|---|---|
| HSCH-5531 | Beam Lead Silicon Schottky Diodes |
| HSCH-910 | GaAs Beam Lead Schottky Barrier Diodes (48K in pdf) |
| HSCH-9101 | GaAs Beam Lead Schottky Barrier Diodes (48K in pdf) |
| HSCH-9161 | Zero Bias Beamlead Detector Diode (82K in pdf) |
| HSCH-9201 | GaAs Beam Lead Schottky Barrier Diodes (48K in pdf) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HSCH5531 | 制造商:ASI 制造商全稱:ASI 功能描述:BEAM LEAD SCHOTTKY DIODE |
| HSCH-5531 | 功能描述:射頻檢測器 1-26GHz RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 頻率范圍:650 MHz to 3 GHz 最大二極管電容: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:SC-88 封裝:Reel |
| HSCH-910 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:GaAs Beam Lead Schottky Barrier Diodes (48K in pdf) |
| HSCH-9101 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:GaAs Beam Lead Schottky Barrier Diodes (48K in pdf) |
| HSCH-9102 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:GaAs Beam Lead Schottky Barrier Diodes |
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