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參數(shù)資料
| 型號： | HSCH-5316 |
| 英文描述： | Beam Lead Silicon Schottky Diodes |
| 中文描述： | 梁鉛硅肖特基二極管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 127K |
| 代理商： | HSCH-5316 |
3-65
Applications
The beam lead diode is ideally
suited for use in stripline or
microstrip circuits. Its small
physical size and uniform dimen-
sions give it low parasitics and
repeatable RF characteristics
through K-band.
The basic medium barrier devices
in this family are DC tested
HSCH-5310, -5312, and -5316. A
batch matched version is available
as the HSCH-5317. Equivalent low
barrier devices are HSCH-5330,
-5332, and -5336. Batch matched
Assembly Techniques
Thermocompression bonding is
recommended. Welding or
conductive epoxy may also be
used. For additional information
see Application Note 979, “The
Handling and Bonding of Beam
Lead Devices Made Easy,” or
Application Note 993, “Beam Lead
Device Bonding to Soft
Substrates.”
I
Min.
Break-
down
Voltage
V
BR
(V)
4
Max.
Dynamic
Resis-
tance
R
D
(
)
12
Max.
Total
Capaci-
tance
C
T
(pF)
0.25
Max.
Noise
Figure
NF (dB)
Impedance
Z
IF
(
)
Max.
Forward
Voltage
V
F
(mV)
500
Max.
Leakage
Current
I
R
(nA)
100
Part
Number
HSCH-
Batch*
Matched
HSCH-
Max.
SWR
Barrier
Min.
Max.
5318
5319
Medium
6.2 at
9.375 GHz
200
400
1.5:1
5314
5315
7.2 at
16 GHz
16
0.15
5340
5341
Low
7.5 at
26 GHz
DC Load Resistance - 0
LO Power = 1 mW
I
F
= 30 MHz, 1.5 dB NF
150
350
1.5:1
4
20
0.10
375
400
Test
NF
≤
0.3 dB
Z
IF
≤
25
I
R
≤
10
μ
A
I
F
= 5 mA
V
= 0 V
f = 1 MHz
I
F
= 1 mA
V
R
= 1 V
Conditions
*Minimum batch size 20 units.
Note:
1. C
T
= C
J
+ 0.02 pF (fringing cap).
Table IA. Electrical Specifications for RF Tested Diodes at T
A
= 25
°
C
versions are available as
HSCH-5331 and -5333.
For applications requiring
guaranteed RF-tested perform-
ance up to 26 GHz, the HSCH-5340
is selected with batch match units
available as the HSCH-5341. The
HSCH-5318 is selected for 6.2 dB
maximum noise figure at
9.375GHz; with RF batch match
units available as the HSCH-5319.
The HSCH-5314 is rated at 7.2 dB
maximum noise figure at 16 GHz
with RF batch match units
available as the HSCH-5315.
相關PDF資料 |
PDF描述 |
|---|---|
| HSCH-5318 | Beam Lead Silicon Schottky Diodes |
| HSCH-5330 | Beam Lead Silicon Schottky Diodes |
| HSCH-5331 | Beam Lead Silicon Schottky Diodes |
| HSCH-5332 | Beam Lead Silicon Schottky Diodes |
| HSCH-5336 | Beam Lead Silicon Schottky Diodes |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HSCH-5317 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Beam Lead Schottky Diodes for Mixers and Detectors (1 - 26 GHz) |
| HSCH-5318 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Beam Lead Schottky Diodes for Mixers and Detectors (1 - 26 GHz) |
| HSCH-5319 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Beam Lead Schottky Diodes for Mixers and Detectors (1 - 26 GHz) |
| HSCH-5330 | 功能描述:射頻檢測器 1-26GHz RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 頻率范圍:650 MHz to 3 GHz 最大二極管電容: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:SC-88 封裝:Reel |
| HSCH-5330 | 制造商:Avago Technologies 功能描述:SCHOTTKY DIODE |
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