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參數(shù)資料
| 型號： | HSB2838 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 26K |
| 代理商： | HSB2838 |
HSB2836
Rev.1, Mar. 2002, page 2 of 5
Absolute Maximum Ratings *
1
(Ta = 25
°
C)
Item
Symbol
Value
Unit
Peak reverse voltage
V
RM
V
R
I
O
*
I
FM
*
I
FSM
*
Tj
85
V
Reverse voltage
80
V
Average rectified current
1
100
mA
Peak forward current
1
300
mA
Non-Repetitive peak forward surge current
2
4
A
°
C
°
C
Junction temperature
125
55 to +125
Storage temperature
Notes
:
1. Two device total.
2. Value at duration of 1
μ
sec, two device total.
Tstg
Electrical Characteristics *
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
V
F1
V
F2
V
F3
I
R
C
1.0
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
V
R
= 80 V
V
R
= 0 V, f = 1 MHz
I
F
= 10 mA, V
R
= 6 V, R
L
= 50
1.0
Forward voltage
1.2
V
Reverse current
0.1
μ
A
pF
Capacitance
4.0
Reverse recovery time
Note
:
Per one device.
t
rr
20.0
ns
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| HSB2838-E | 制造商:Renesas Electronics Corporation 功能描述:Diode, small signal, HSB2838-E |
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