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參數(shù)資料
| 型號： | HS9A-65647RH-Q |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | DRAM |
| 英文描述： | Radiation Hardened 8K x 8 SOS CMOS Static RAM |
| 中文描述： | 8K X 8 STANDARD SRAM, 50 ns, CDFP36 |
| 文件頁數(shù)： | 6/16頁 |
| 文件大小： | 110K |
| 代理商： | HS9A-65647RH-Q |
829
HS-65647RH
TABLE 5. BURN-IN DELTA PARAMETERS (+25
o
C), GROUP B, SUBGROUP 5
PARAMETER
SYMBOL
DELTA LIMITS
Standby Supply Current
IDDSB
±
150
μ
A
High Impedance Output Leakage Current
IOZH, IOZL
±
2
μ
A
Input Leakage Current
IIH, IIL
±
150nA
Low Level Output Voltage
VOL
±
60mV
Output High Voltage
VOH
±
150mV
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE
GROUP
MIL-STD-883
METHOD
GROUP A SUBGROUPS
TESTED FOR -Q
RECORDED
FOR -Q
TESTED FOR -8
RECORDED
FOR -8
Initial Test
100% 5004
1, 7, 9
1 (Note 2)
1, 7, 9
Interim Test
100% 5004
1, 7, 9,
1,
(Note 2)
1, 7, 9
PDA
100% 5004
1, 7,
-
1, 7
Final Test
100% 5004
2, 3, 8A, 8B, 10, 11
-
2, 3, 8A, 8B, 10, 11
Group A (Note 1)
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
-
1, 2, 3, 7, 8A, 8B, 9,
10, 11
Subgroup B5
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11,
1, 2, 3,
(Note 2)
N/A
Subgroup B6
Sample 5005
1, 7, 9
-
N/A
Group C
Sample 5005
N/A
N/A
1, 2, 3, 7, 8A, 8B, 9,
10, 11
Group D
Sample 5005
1, 7, 9
-
1, 7, 9
Group E, Subgroup 2
Sample 5005
1, 7, 9
-
1, 7, 9
NOTES:
1. Alternate Group A testing in accordance with MIL-STD-883 method 5005 may be exercised.
2. Table 5 parameters only
Spec Number
518729
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PDF描述 |
|---|---|
| HS1-65647RH-Q | Radiation Hardened 8K x 8 SOS CMOS Static RAM |
| HS9-65647RH-Q | Radiation Hardened 8K x 8 SOS CMOS Static RAM |
| HS1-82C52RH-8 | UART |
| HS1-82C59ARH-8 | Plug; HRS No: 222-3893-8 50 |
| HS1-82C85RH-8 | CONNECTOR ACCESSORY |
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