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參數(shù)資料
| 型號(hào)： | HS9-9008RH-Q |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | ADC |
| 英文描述： | Radiation Hardened CMOS 8-Bit Flash Analog-to-Digital Converter |
| 中文描述： | 1-CH 8-BIT FLASH METHOD ADC, PARALLEL ACCESS, CDFP28 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大?。?/td> | 193K |
| 代理商： | HS9-9008RH-Q |
4
Die Characteristics
DIE DIMENSIONS:
180 mils x 197 mils x 21
±
1 mils
INTERFACE MATERIALS:
Glassivation:
Type: SiO
2
Thickness: 8k
±
1k
Top Metallization:
Metal 1 - Type: Moly/TiW
Thickness: 5.8k
±
10%
Metal 2- Type: Al/Si/Cu
Thickness: 10k
±
10%
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential (Powered Up):
V
DD
ADDITIONAL INFORMATION:
Worst Case Current Density:
Metal 1 -Designs using the Intersil AVLSI-1RA process
take advantage of the superior current carrying
capabilities of Moly.TiW. The current density limit
established by Intersil Reliability is 5.0 x 10
5
A/cm
2
Metal 2 -1.63 x 10
5
A/cm
2
Process:
AVLSI1RA
Metallization Mask Layout
HS-9008RH
VDDD2
VSSA2
VREF-
VDDA2
B1
B2
B3
B4
CLK
1/2R
VSSD1
VIN
VSSD2
VDDD1
VSSA1
VREF+
VDDA1
OF
B8
B7
B6
B5
VSSA3
VSSD3
VDDD3
VDDA3
CE2
CE1
HS-9008RH
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