參數(shù)資料
型號(hào)： HS9-80C85RH
廠(chǎng)商： Intersil Corporation
英文描述： Radiation Hardened 8-Bit CMOS Microprocessor
中文描述： 輻射加固8位CMOS微處理器
文件頁(yè)數(shù)： 5/19頁(yè)
文件大?。?/td> 159K
代理商： HS9-80C85RH
5
Specifications HS-80C85RH
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V
Input, Output or I/O Voltage . . . . . . . . . . . . GND-0.3V to VCC+0.3V
Storage Temperature Range . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300
o
C
Typical Derating Factor. . . . . . . . . . .2.0mA/MHz Increase in IDDOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
SBDIP Package. . . . . . . . . . . . . . . . . . . .
Ceramic Flatpack Package . . . . . . . . . . .
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.11W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.65W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22.2mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . .13.0mW/
o
C
θ
JA
θ
JC
45
o
C/W
77
o
C/W
10
o
C/W
13
o
C/W
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Supply Voltage Range (VDD) . . . . . . . +4.75V to +5.25V
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0V to +0.8V
Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . . VDD -0.5V to VDD
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
-55
o
C, +25
o
C, or
+125
o
C
-55
o
C, +25
o
C, or
+125
o
C
-55
o
C, +25
o
C, or
+125
o
C
-55
o
C, +25
o
C, or
+125
o
C
-55
o
C, +25
o
C, or
+125
o
C
-55
o
C, +25
o
C, or
+125
o
C
LIMITS
UNITS
MIN
MAX
Input Leakage
Current
IIH or
IIL
VDD = 5.25V, VI = VDD
or GND
1, 2, 3
-1.0
1.0
μ
A
High Level Output
Voltage
VOH
VDD = 4.75V, IOH = -1.0mA
1, 2, 3
VDD -0.5
-
V
Low Level Output
Voltage
VOL
VDD = 5.25V, IOL = 1.0mA,
1, 2, 3
-
0.5
V
Static Current
IDDSB
VDD = 5.25V, Clock Out = Hi
and Low
1, 2, 3
-
500
μ
A
Operating Supply
Current (Note 2)
IDDOP
VDD = 5.25V, f = 1MHz
(Note 2)
1, 2, 3
-
5.0
mA/MHz
Functional Tests
FT
VDD = 4.75V and 5.25V,
TCYC = 500ns,
VOL
≤
VDD/2, VOH
≥
VDD/2
7, 8A, 8B
-
-
-
NOTES:
1. All devices guaranteed at worst case limits and over radiation.
2. Operating supply current (IDDOP) is proportional to crystal frequency. Parts are tested at 1MHz
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
CLK Low Time (Standard CLK Loading)
T1
9, 10, 11
-55
o
C, +25
o
C, +125
o
C
40
-
ns
CLK High Time (Standard CLK Loading)
T2
9, 10, 11
-55
o
C, +25
o
C, +125
o
C
100
-
ns
CLK Rise Time
Tr
9, 10, 11
-55
o
C, +25
o
C, +125
o
C
-
115
ns
CLK Fall Time
Tf
9, 10, 11
-55
o
C, +25
o
C, +125
o
C
-
115
ns
X1 Rising to CLK Rising
TXKR
9, 10, 11
-55
o
C, +25
o
C, +125
o
C
30
250
ns
X1 Rising to CLK Falling
TXKF
9, 10, 11
-55
o
C, +25
o
C, +125
o
C
50
275
ns
A8-15 Valid to Leading Edge of Control (Note 5)
TAC
9, 10, 11
-55
o
C, +25
o
C, +125
o
C
300
-
ns
A0-7 Valid to Leading Edge of Control
TACL
9, 10, 11
-55
o
C, +25
o
C, +125
o
C
300
-
ns
A0-15 Valid to Valid Data In
TAD
9, 10, 11
-55
o
C, +25
o
C, +125
o
C
875
-
ns
Address Float After Leading Edge of READ
(INTA)
TAFR
9, 10, 11
-55
o
C, +25
o
C, +125
o
C
-
70
ns
Spec Number
518054
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