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參數(shù)資料
| 型號(hào)： | HS9-4424RH-Q |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers |
| 中文描述： | 2 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, CDFP16 |
| 封裝： | CERAMIC, DFP-16 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 56K |
| 代理商： | HS9-4424RH-Q |
2
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
Die Characteristics
DIE DIMENSIONS:
4890
μ
m x 3370
μ
m (193 mils x 133 mils)
Thickness: 483
μ
m
±
25.4
μ
m (19 mils
±
1 mil)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0k
±
1.0k
Top Metallization:
Type: AlSiCu
Thickness: 16.0k
±
2k
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 10
5
A/cm
2
Transistor Count:
125
Metallization Mask Layout
HS-4424RH, HS-4424BRH
GND (5)
IN B (7)
OUT B (10)
OUT B (11)
V
CC
(12)
V
CC
(13)
GND (4)
IN A (2)
OUT A (15)
OUT A (14)
HS-4424RH, HS-4424BRH
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