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參數(shù)資料
| 型號(hào)： | HS1-201HSRH-8 |
| 廠商： | INTERSIL CORP |
| 元件分類(lèi)： | 運(yùn)動(dòng)控制電子 |
| 英文描述： | Radiation Hardened High Speed, Quad SPST, CMOS Analog Switch |
| 中文描述： | QUAD 1-CHANNEL, SGL POLE SGL THROW SWITCH, CDIP16 |
| 封裝： | SIDE BRAZED, CERAMIC, DIP-16 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | HS1-201HSRH-8 |
2
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
Die Characteristics
DIE DIMENSIONS
2667
μ
m x 4623
μ
m (105 mils x 182 mils)
Thickness: 483
μ
m
±
25.4
μ
m (19 mils
±
1 mil)
INTERFACE MATERIALS
Glassivation
Type: Phosphorus Silicon Glass (PSG)
Thickness: 8.0k
+/-1.0k
Metallization
Type: Ti/AlCu
Thickness: 16.0k
+/- 2k
Substrate
Rad Hard Silicon Gate, Dielectric Isolation
Backside Finish
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential
Unbiased (DI)
ADDITIONAL INFORMATION
Worst Case Current Density
<2.0 x 10
5
A/cm
2
Transistor Count
328
Metallization Mask Layout
HS-201HSRH
OUT4
IN4
GND
V-
IN1
A4
A3
A1
A2
OUT3
IN3
V+
IN2
OUT2
OUT1
HS-201HSRH
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