參數(shù)資料
型號(hào): HS-1825ARH
廠商: Intersil Corporation
英文描述: Radiation Hardened High-Speed, Dual Output PWM
中文描述: 輻射加固高速,雙輸出PWM
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 35K
代理商: HS-1825ARH
2
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
Die Characteristics
DIE DIMENSIONS:
4710
μ
m x 3570
μ
m (185 mils x 140 mils)
Thickness: 483
μ
m
±
25.4
μ
m (19 mils
±
1 mil)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0k
±
1.0k
Top Metallization:
Type: ALSiCu
Thickness: 16.0k
±
2k
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 10
5
A/cm
2
Transistor Count:
225
Metallization Mask Layout
HS-1825ARH
NOTES:
1. This is the oscillator ground (OSCGND) bond pad and must be connected to GND.
2. PGND and VC each require two bond pad connections.
PGND (12)
(NOTE 2)
OUTA (11)
GND (10)
OSCGND
(NOTE 1)
ILIM (9)
SS (8)
RAMP (7)
CT (6)
RT (5)
(1) IN-
(16) V
REF
(15) V
CC
(14) OUTB
(13) VC
(NOTE 2)
(3) EAOUT
(4) CLK/LEB
(2) IN+
VC (13)
(NOTE 2)
(12) PGND
(NOTE 2)
HS-1825ARH
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