參數(shù)資料
型號(hào): HRV103A
廠商: Renesas Technology Corp.
英文描述: Silicon Schottky Barrier Diode for Rectifying
中文描述: 硅肖特基二極管整頓
文件頁(yè)數(shù): 2/6頁(yè)
文件大小: 92K
代理商: HRV103A
HRV103A
Rev.1.00 Oct 12, 2004 page 2 of 5
Absolute Maximum Ratings
(Ta = 25
°
C)
Unit
V
V
A
A
°
C
°
C
Item
Symbol
Value
30
30
1
5
125
55 to +125
Repetitive peak reverse voltage
Reverse voltage
Average rectified current
Non-Repetitive peak forward surge current
Junction temperature
Storage temperature
Notes: 1. 10ms sine wave 1 pulse
2. Ta = 44
°
C, With Ceramics board (board size: 50mm
×
50 mm, Land size 2mm
×
2 mm)
Short form wave (
θ
180
°
C), VR = 10 V.
Electrical Characteristics
V
RRM
V
R
I
O
*
2
I
FSM
*
1
Tj
Tstg
(Ta = 25
°
C)
Item
Symbol
V
F1
V
F2
V
F3
I
R1
I
R2
C
Rth(j-a)
Min
Typ
100
200
Max
0.27
0.36
0.42
100
1000
40
Unit
V
Test Condition
I
F
= 100 mA
I
F
= 700 mA
I
F
= 1 A,
V
R
= 5 V
V
R
= 30 V
V
R
= 10 V, f = 1 MHz
Ceramics board *
1
Glass epoxy board *
2
Forward voltage
Reverse current
μ
A
Capacitance
Thermal resistance
pF
°
C/W
Notes: 1. Ceramics board
1.0
50h
×
50w
×
0.8t
Unit: mm
2.0
0.3
0.5
2.0
2.0
2. Glass epoxy board
1.0
50h
×
50w
×
0.8t
Unit: mm
6.0
0.5
6.0
0.3
2.0
3. TURP is the structure which radiates heat to a substrate, please perform mounting to a substrate by reflow.
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