參數(shù)資料
型號(hào): HRC0203C
廠商: Renesas Technology Corp.
英文描述: Silicon Schottky Barrier Diode for Rectifying
中文描述: 硅肖特基二極管整頓
文件頁數(shù): 4/8頁
文件大?。?/td> 89K
代理商: HRC0203C
HRC0203C
Rev.2, Nov. 2002, page 2 of 2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
*
I
O
*
I
FSM
*
Tj
1
30
V
Average rectified current
1
200
mA
Non-Repetitive peak forward surge current
2
2
A
Junction temperature
125
°C
Storage temperature
Tstg
–55 to +125
°C
Notes: 1. See from Fig.3 to Fig.5, with polyimide board.
2. 10 msec sine wave 1 pulse.
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
V
F1
V
F2
I
R
Rth(j-a)
0.25
I
F
= 5 mA
I
F
= 200 mA
V
R
= 10 V
Polyimide board *
Forward voltage
0.45
V
Reverse current
30
μ
A
°
C/W
Thermal resistance
Note: 1. Polyimide board
550
1
Unit: mm
3
0
1.5
20h
×
15w
×
0.8t
1.5
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