參數(shù)資料
型號(hào)： HN7G03FU
廠商： Toshiba Corporation
英文描述： Power Management Switch Applications
中文描述： 電源管理開(kāi)關(guān)應(yīng)用
文件頁(yè)數(shù)： 1/7頁(yè)
文件大小： 553K
代理商： HN7G03FU
HN7G03FU
2007-11-01
1
TOSHIBA Multichip Discrete Device
HN7G03FU
Power Management Switch Applications
Driver Circuit Applications
Interface Circuit Applications
Q1 (transistor) : 2SA1955 equivalent
Q2 (S-MOS) : SSM3K04FU equivalent
Q1 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
15
V
Collector-emitter voltage
V
CEO
12
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
400
mA
Base current
I
B
50
mA
Q2 Absolute Maximum Ratings (
Ta = 25°C
)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
V
DS
20
V
Gate-source voltage
V
GSS
10
V
Drain current
I
D
100
mA
Q1, Q2 Common Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P*
200
mW
Junction temperature
T
j
125
°
C
Storage temperature range
T
stg
55~125
°
C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating.
1.EMITTER
2.BASE
3.DRAIN
4.SOURCE
5.GATE
6.COLLECTOR
US6
JEDEC
―
JEITA
―
TOSHIBA
2-2J1E
Weight: 6.8 mg (typ.)
Unit: mm
相關(guān)PDF資料
PDF描述
HN7G04FU General-Purpose Amplifier Applications
HN7G05FU Power Management Switch Applications, Inverter Circuit
HN7G06FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications
HN7G07FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications
HN7G08FE General-Purpose Amplifier Applications
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HN7G03FU-B(TE85L,F 功能描述:兩極晶體管 - BJT Vceo=-12V Vds=20V Ic=-400mA Id=100mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
HN7G04FU 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:General-Purpose Amplifier Applications
HN7G04FU-A 功能描述:兩極晶體管 - BJT INCORRECT MOUSER P/N 10K x 47Kohms RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
HN7G04FU-A(TE85L,F 功能描述:兩極晶體管 - BJT Vceo=-12V Vceo=50V 10K x 47Kohms RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
HN7G05FU 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Management Switch Applications, Inverter Circuit
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*