參數(shù)資料
型號: HN58X2564NI
英文描述: HN58X2532I/HN58X2564I Datasheet
中文描述: HN58X2532I/HN58X2564I數(shù)據(jù)表
文件頁數(shù): 15/20頁
文件大?。?/td> 59K
代理商: HN58X2564NI
HN58X2408/HN58X2416/HN58X2432/HN58X2464FPIAG
15
Read Operation
There are three read operations: current address read, random read, and sequential read. Read operations
are initiated the same way as write operations with the exception of R/W = “1”.
Current Address Read:
The internal address counter maintains the last address accessed during the last read or write operation,
with incremented by one. Current address read accesses the address kept by the internal address counter.
After receiving a start condition and the device address word(R/W is “1”), the EEPROM outputs the 8-bit
current address data from the most significant bit following acknowledgment “0”. If the EEPROM
receives acknowledgment “1” (no acknowledgment) and a following stop condition, the EEPROM stops
the read operation and is turned to a standby state. In case the EEPROM have accessed the last address of
the last page at previous read operation, the current address will roll over and returns to zero address. In
case the EEPROM have accessed the last address of the page at previous write operation, the current
address will roll over within page addressing and returns to the first address in the same page. The current
address is valid while power is on. The current address after power on will be indefinite. The random read
operation described below is necessary to define the memory address.
Current Address Read Operation
8k to 64k
Device
address
Read data (n+1)
Start
Stop
1 0 1 0
R
D
D
D
D
D
D
D
D
ACK
No ACK
R/W
*
1
*
2
*
3
Notes: 1. Don‘t care bit for 16k.
2. Don‘t care bits for 8k and 16k.
3. Don‘t care bits for 4k, 8k and 16k.
相關(guān)PDF資料
PDF描述
HN58X2564TI HN58X2532I/HN58X2564I Datasheet
HN61256FP ROM|32KX8/64KX4|CMOS|QFP|54PIN|PLASTIC
HN61256P ROM|32KX8/64KX4|CMOS|DIP|28PIN|PLASTIC
HN613128FP x8 ROM (Mask Programmable)
HN613128P x8 ROM (Mask Programmable)
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