參數(shù)資料
型號: HN58X2564FPI
英文描述: HN58X2532I/HN58X2564I Datasheet
中文描述: HN58X2532I/HN58X2564I數(shù)據(jù)表
文件頁數(shù): 13/20頁
文件大?。?/td> 59K
代理商: HN58X2564FPI
HN58X2408/HN58X2416/HN58X2432/HN58X2464FPIAG
13
Page Write:
The EEPROM is capable of the page write operation which allows any number of bytes up to 32 bytes to
be written in a single write cycle. The page write is the same sequence as the byte write except for
inputting the more write data. The page write is initiated by a start condition, device address word,
memory address(n) and write data(Dn) with every ninth bit acknowledgment. The EEPROM enters the
page write operation if the EEPROM receives more write data(Dn+1) instead of receiving a stop condition.
The a0 to a4 address bits are automatically incremented upon receiving write data(Dn+1). The EEPROM
can continue to receive write data up to 32 bytes. If the a0 to a4 address bits reaches the last address of the
page, the a0 to a4 address bits will roll over to the first address of the same page and previous write data
will be overwritten. Upon receiving a stop condition, the EEPROM stops receiving write data and enters
internally-timed write cycle.
Page Write Operation
Device
address
Memory
address (n)
Write data (n+m)
Write data (n)
8k to
16k
1 0 1 0
W
a
a
a
a
a
a
a
a
D
D
D
D
D
D
D
D
D
D
D
D
D
D
Stop
ACK
Start
ACK
ACK
ACK
R/W
Notes: 1. Don‘t care bits for 32k and 64k.
2. Don‘t care bit for 32k.
Device
address
1st Memory
address (n)
*
1
*
1
*
1
*
2
2nd Memory
address (n)
Write data (n+m)
Write data (n)
32k to
64k
1 0 1 0
W
a
a
a
a
a
a
a
a
a
a
a
a
a
D
D
D
D
D
D
D
D
D
D
D
D
D
D
Stop
Start
ACK
ACK
ACK
ACK
ACK
R/W
相關(guān)PDF資料
PDF描述
HN58X2564NI HN58X2532I/HN58X2564I Datasheet
HN58X2564TI HN58X2532I/HN58X2564I Datasheet
HN61256FP ROM|32KX8/64KX4|CMOS|QFP|54PIN|PLASTIC
HN61256P ROM|32KX8/64KX4|CMOS|DIP|28PIN|PLASTIC
HN613128FP x8 ROM (Mask Programmable)
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