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參數資料
| 型號： | HN58X25128I |
| 英文描述： | Datasheet|ADE-203-1371|NOV.15.02|170K |
| 中文描述： | 技術資料|腺- 203 - 1371 | NOV.15.02 | 170,000 |
| 文件頁數： | 13/20頁 |
| 文件大小： | 59K |
| 代理商： | HN58X25128I |
HN58X2408/HN58X2416/HN58X2432/HN58X2464FPIAG
13
Page Write:
The EEPROM is capable of the page write operation which allows any number of bytes up to 32 bytes to
be written in a single write cycle. The page write is the same sequence as the byte write except for
inputting the more write data. The page write is initiated by a start condition, device address word,
memory address(n) and write data(Dn) with every ninth bit acknowledgment. The EEPROM enters the
page write operation if the EEPROM receives more write data(Dn+1) instead of receiving a stop condition.
The a0 to a4 address bits are automatically incremented upon receiving write data(Dn+1). The EEPROM
can continue to receive write data up to 32 bytes. If the a0 to a4 address bits reaches the last address of the
page, the a0 to a4 address bits will roll over to the first address of the same page and previous write data
will be overwritten. Upon receiving a stop condition, the EEPROM stops receiving write data and enters
internally-timed write cycle.
Page Write Operation
Device
address
Memory
address (n)
Write data (n+m)
Write data (n)
8k to
16k
1 0 1 0
W
a
a
a
a
a
a
a
a
D
D
D
D
D
D
D
D
D
D
D
D
D
D
Stop
ACK
Start
ACK
ACK
ACK
R/W
Notes: 1. Don‘t care bits for 32k and 64k.
2. Don‘t care bit for 32k.
Device
address
1st Memory
address (n)
*
1
*
1
*
1
*
2
2nd Memory
address (n)
Write data (n+m)
Write data (n)
32k to
64k
1 0 1 0
W
a
a
a
a
a
a
a
a
a
a
a
a
a
D
D
D
D
D
D
D
D
D
D
D
D
D
D
Stop
Start
ACK
ACK
ACK
ACK
ACK
R/W
相關PDF資料 |
PDF描述 |
|---|---|
| HN58X25256I | Datasheet|ADE-203-1371|NOV.15.02|170K |
| HN58X2532FPI | HN58X2532I/HN58X2564I Datasheet |
| HN58X2532NI | HN58X2532I/HN58X2564I Datasheet |
| HN58X2532TI | HN58X2532I/HN58X2564I Datasheet |
| HN58X2564FPI | HN58X2532I/HN58X2564I Datasheet |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HN58X25256FPI#S0 | 功能描述:IC EEPROM 256K 5MHZ 8SOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6 |
| HN58X25256FPIAG | 制造商:Renesas Electronics Corporation 功能描述: |
| HN58X25256FPIAG#S0 | 制造商:Renesas Electronics Corporation 功能描述:MEMORY, 32K X 8 BIT 制造商:Renesas Electronics Corporation 功能描述:MEMORY, 32K X 8 BIT - Tape and Reel |
| HN5-9 | 制造商:POWER-ONE 制造商全稱:Power-One 功能描述:Linear Power Supplies Data Sheet |
| HN5-9/OVP-A | 功能描述:線性和開關式電源 5V/9A OVPROTECTION RoHS:否 制造商:TDK-Lambda 產品:Switching Supplies 開放式框架/封閉式:Enclosed 輸出功率額定值:800 W 輸入電壓:85 VAC to 265 VAC 輸出端數量:1 輸出電壓（通道 1）:20 V 輸出電流（通道 1）:40 A 商用/醫(yī)用: 輸出電壓（通道 2）: 輸出電流（通道 2）: 安裝風格:Rack 長度: 寬度: 高度: |
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