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參數(shù)資料
| 型號： | HN58V65AI |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | 64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version |
| 中文描述： | 64K的EEPROM的（8 KWord的× 8位）就緒/忙功能水庫功能（HN58V66A）寬溫版本 |
| 文件頁數(shù)： | 20/28頁 |
| 文件大小： | 225K |
| 代理商： | HN58V65AI |
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HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series
Rev.3.00, Feb.02.2004, page 20 of 26
WE
,
CE
Pin Operation
During a write cycle, addresses are latched by the falling edge of
WE
or
CE
, and data is latched by the
rising edge of
WE
or
CE
.
Write/Erase Endurance and Data Retention Time
The endurance is 10
5
cycles in case of the page programming and 10
4
cycles in case of the byte
programming (1% cumulative failure rate). The data retention time is more than 10 years when a device is
page-programmed less than 10
4
cycles.
Data Protection
To prevent this phenomenon, this device has a noise cancellation function that cuts noise if its width is 15
ns or less.
1. Data Protection against Noise on Control Pins (
CE
,
OE
,
WE
) during Operation
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to
programming mode by mistake. Be careful not to allow noise of a width of more than 15 ns on the
control pins.
WE
CE
OE
V
0 V
V
0 V
15 ns max
IH
IH
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相關(guān)代理商/技術(shù)參數(shù) |
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| HN58V65API-10 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version |
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