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參數(shù)資料
| 型號： | HN58S256AT-20 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 256 k EEPROM (32-kword x 8-bit) |
| 中文描述： | 256畝的EEPROM（32 KWord的× 8位） |
| 文件頁數(shù)： | 12/17頁 |
| 文件大?。?/td> | 88K |
| 代理商： | HN58S256AT-20 |
HN58S256A Series
Functional Description
Automatic Page Write
Page-mode write feature allows 1 to 64 bytes of data to be written into the EEPROM in a single write
cycle. Following the initial byte cycle, an additional 1 to 63 bytes can be written in the same manner.
Each additional byte load cycle must be started within 30
μ
s from the preceding falling edge of
WE
or
CE
. When
CE
or
WE
is high for 100
μ
s after data input, the EEPROM enters write mode automatically
and the input data are written into the EEPROM.
Data
Polling
Data
polling allows the status of the EEPROM to be determined. If EEPROM is set to read mode during
a write cycle, an inversion of the last byte of data to be loaded outputs from I/O7 to indicate that the
EEPROM is performing a write operation.
WE
,
CE
Pin Operation
During a write cycle, addresses are latched by the falling edge of
WE
or
CE
, and data is latched by the
rising edge of
WE
or
CE
.
Write/Erase Endurance and Data Retention Time
The endurance is 10
5
cycles in case of the page programming and 10
4
cycles in case of the byte
programming (1% cumulative failure rate). The data retention time is more than 10 years when a device is
page-programmed less than 10
4
cycles.
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PDF描述 |
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| HN58S256AT-15 | 256 k EEPROM (32-kword x 8-bit) |
| HN58S65AI | 8192-word ×8-bit Electrically Erasable and Programmable CMOS ROM(8k字×8位 EEPROM) |
| HN58S65AT-15 | 64 k EEPROM (8-kword x 8-bit) Ready/Busy function |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN58S256ATI-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58S256ATI-20 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58S65A | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:64 k EEPROM (8-kword x 8-bit) Ready/Busy function |
| HN58S65AISERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58S65ASERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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