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參數(shù)資料
| 型號： | HN58C1001 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
| 中文描述： | 100萬的EEPROM（128 KWord的× 8位）就緒/忙和RES功能 |
| 文件頁數(shù)： | 6/22頁 |
| 文件大?。?/td> | 117K |
| 代理商： | HN58C1001 |
HN58C1001 Series
6
Write Cycle
Parameter
Symbol
Min*
2
Typ
Max
Unit
Test conditions
Address setup time
t
AS
t
AH
t
CS
t
CH
t
WS
t
WH
t
OES
t
OEH
t
DS
t
DH
t
WP
t
CW
t
DL
t
BLC
t
BL
t
WC
t
DB
t
DW
t
RP
t
RES
0
—
—
ns
Address hold time
CE
to write setup time (
WE
controlled)
CE
hold time (
WE
controlled)
WE
to write setup time (
CE
controlled)
WE
hold time (
CE
controlled)
OE
to write setup time
OE
hold time
150
—
—
ns
0
—
—
ns
0
—
—
ns
0
—
—
ns
0
—
—
ns
0
—
—
ns
0
—
—
ns
Data setup time
100
—
—
ns
Data hold time
WE
pulse width (
WE
controlled)
CE
pulse width (
CE
controlled)
10
—
—
ns
250
—
—
ns
250
—
—
ns
Data latch time
300
—
—
ns
Byte load cycle
0.55
—
30
μ
s
μ
s
Byte load window
100
—
—
Write cycle time
—
—
10*
3
ms
Time to device busy
120
—
—
ns
Write start time
150*
4
—
—
ns
Reset protect time
100
—
—
μ
s
μ
s
Reset high time*
5
Notes: 1. t
and t
are defined as the time at which the outputs achieve the open circuit conditions and are
no longer driven.
2. Use this device in longer cycle than this value.
3. t
must be longer than this value unless polling techniques or RDY/
Busy
are used. This device
automatically completes the internal write operation within this value.
4. Next read or write operation can be initiated after t
DW
if polling techniques or RDY/
Busy
are used.
5. This parameter is sampled and not 100% tested.
6. A7 to A16 are page addresses and must be same within the page write operation.
7. See AC read characteristics.
1
—
—
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相關代理商/技術(shù)參數(shù) |
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| HN58C1001FP-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
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| HN58C1001FP-15 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
| HN58C1001FP-15E | 制造商:Renesas Electronics 功能描述:5V Parallel Cut Tape |
| HN58C1001FPI-15E | 制造商:Renesas Electronics 功能描述:Cut Tape |
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