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參數(shù)資料
| 型號(hào)： | HN2C01FUY |
| 英文描述： | TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP |
| 中文描述： | 晶體管|晶體管|一對(duì)|叩| 50V五（巴西）總裁| 150毫安一（c）|的TSOP |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 132K |
| 代理商： | HN2C01FUY |
HN2C01FU
2001-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN2C01FU
Audio Frequency General Purpose Amplifier Applications
Small package (dual type)
High voltage and high current : V
CEO
= 50V, I
C
= 150mA (max)
High h
FE
: h
FE
= 120
~
400
Excellent h
FE
linearity
: h
FE
(I
C
= 0.1mA) / (I
C
= 2mA)
= 0.95 (typ.)
Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
60
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
150
mA
Base current
I
B
30
mA
Collector power dissipation
P
C
*
200
mW
Junction temperature
T
j
125
°C
Storage temperature range
T
stg
55~125
°C
*
Total rating
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
―
V
CB
= 60V, I
E
= 0
―
―
0.1
μA
Emitter cut-off current
I
EBO
―
V
EB
= 5V, I
C
= 0
―
―
0.1
μA
DC current gain
h
FE (Note)
―
V
CE
= 6V, I
C
= 2mA
120
―
400
―
Collector-emitter saturation voltage
V
CE (sat)
―
I
C
= 100mA, I
B
=10mA
―
0.1
0.25
V
Transition frequency
f
T
―
V
CE
= 10V, I
C
= 1mA
80
―
―
MH
z
Collector output capacitance
C
ob
―
V
CB
= 10V, I
E
= 0, f = 1MH
z
―
2
3.5
pF
Note: h
FE
classification
Y(Y): 120
~
240, GR(G): 200
~
400
( ) marking symbol
Marking
Equivalent Circuit
(Top View)
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
―
―
2-2J1B
Unit: mm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN2C01FU | NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
| HN2C10FT | VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
| HN2C10FU | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| HN2C11FU | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| HN2C12FT | TRANSISTOR | BJT | PAIR | NPN | 8V V(BR)CEO | 15MA I(C) | TSOP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN2C01FU-Y(TE85L,F | 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN Dual 50V 0.15A hfe120 US6 |
| HN2C10FT | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
| HN2C10FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| HN2C11FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| HN2C12FT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 8V V(BR)CEO | 15MA I(C) | TSOP |
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