參數(shù)資料
型號(hào): HN29W51214ST
英文描述: Flash Application Design Guidelines Others
中文描述: Flash應(yīng)用程序設(shè)計(jì)指南其他
文件頁(yè)數(shù): 1/46頁(yè)
文件大小: 338K
代理商: HN29W51214ST
HN29V102414 Series
1G AND type Flash Memory
More than 32,113-sector (542,581,248-bit)
×
2
ADE-203-1265B (Z)
Rev. 1.0
Jan. 25, 2002
Description
The Hitachi HN29V102414 Series is a CMOS Flash Memory with AND type multi-level memory cells. It
has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase
is as small as (2048 + 64) bytes. Initial available sectors of HN29V102414 are more than 64,226 (98% of all
sector address) and less than 65,536 sectors.
Features
On-board single power supply (V
CC
): V
CC
= 2.7 V to 3.6 V
Organization
AND Flash Memory: (2048 + 64) bytes
×
(More than 32,113 sectors)
× 2
Data register: (2048 + 64) bytes
× 2
Multi-level memory cell
2 bit/per memory cell
Automatic programming
Sector program time: 1.0 ms (typ)
System bus free
Address, data latch function
Internal automatic program verify function
Status data polling function
Automatic erase
Single sector erase time: 1.0 ms (typ)
System bus free
Internal automatic erase verify function
Status data polling function
相關(guān)PDF資料
PDF描述
HN29V102414T-50 EEPROM
HN29V102414T-50H Flash Application Design Guidelines Others
HN29V1G91T-35 Flash Application Design Guidelines Others
HN29V51211T-50H Flash Application Design Guidelines Others
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