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參數(shù)資料
| 型號： | HN28F101T-20 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 131072-word ?? 8-bit CMOS Flash Memory |
| 中文描述： | 131072字？？ 8位CMOS閃存 |
| 文件頁數(shù)： | 6/18頁 |
| 文件大?。?/td> | 106K |
| 代理商： | HN28F101T-20 |
Command Address and Data Input
First cycle
———————————————
The number
Operation Address
*2
Data
*3
of cycle
mode
*1
Second cycle
———————————————
Operation Address
*2
Data
*3
mode
*1
Command
———————————————————————————————————————————————–
Read (memory)
*4
1
Write
X
———————————————————————————————————————————————–
Read identified codes
2
Write
X
———————————————————————————————————————————————–
Setup erase/erase
*5
2
Write
X
———————————————————————————————————————————————–
Erase verify
*5
2
Write
EA
———————————————————————————————————————————————–
Setup auto erase/
2
Write
X
auto erase
*6
———————————————————————————————————————————————–
Setup program/
2
Write
X
program
*7
———————————————————————————————————————————————–
Program verify
*7
2
Write
X
———————————————————————————————————————————————–
Reset
2
Write
X
———————————————————————————————————————————————–
Notes: 1. Refer to command program mode in mode selection about operation mode.
2. Refer to device identifier mode. IA = Identifier address, PA = Programming address, EA = Erase
verify address, RA = Read address
3. Refer to device identifier mode. PA are latched by programming command. ID = Identifier
output code, PD = Programming data, PVD = Programming verify output data, EVD = Erase
verify output data
4. Command latch default value when applying 12 V to V
PP
is “00H”. Device is in read mode after
V
PP
is set 12 V (before other command is input).
5. All data in chip are erased. Erase data according to fast high-reliability erase flowchart.
6. All data in chip are erased. Data are erased automatically by internal logic circuit. External
erase verify is not required. Erasure completion must be verified by status polling after
automatic erase starts.
7. Program data according to fast high-reliability programming flowchart.
00H
Read
RA
Dout
90H
Read
IA
ID
20H
Write
X
20H
A0H
Read
X
EVD
30H
Write
X
30H
40H
Write
PA
PD
C0H
Read
X
PVD
FFH
Write
X
FFH
6
HN28F101 Series
HN28F101 Series
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN28F101TD-12 | 131072-word ?? 8-bit CMOS Flash Memory |
| HN28F101TD-15 | 131072-word ?? 8-bit CMOS Flash Memory |
| HN28F101TD-20 | 131072-word ?? 8-bit CMOS Flash Memory |
| HN29V51211 | 512M AND type Flash Memory More than 32,113-sector (542,581,248-bit) |
| HN29V51211T-50 | 512M AND type Flash Memory More than 32,113-sector (542,581,248-bit) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN28F101TD-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:131072-word ?? 8-bit CMOS Flash Memory |
| HN28F101TD-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:131072-word ?? 8-bit CMOS Flash Memory |
| HN28F101TD-20 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:131072-word ?? 8-bit CMOS Flash Memory |
| HN28F4001FP-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HN28F4001FP-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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