參數(shù)資料
型號(hào): HN28F101T-15
廠商: Electronic Theatre Controls, Inc.
英文描述: 131072-word ?? 8-bit CMOS Flash Memory
中文描述: 131072字?? 8位CMOS閃存
文件頁(yè)數(shù): 12/18頁(yè)
文件大?。?/td> 106K
代理商: HN28F101T-15
12
HN28F101 Series
HN28F101 Series
Notes: 1.
CE
,
OE
, and
WE
must be fixed high during V
PP
transition from 5 V to 12 V or from 12 V to 5 V.
2. Refer to read operation when V
PP
= V
CC
about read operation while V
PP
= 12 V .
3. t
DF
is defined as the time at which the output achieves the open circuit condition and data is no
longer driven.
4. Address are taken into on the falling edge of write-enable pulse and addresses are latched on
the rising edge of write-enabke pulse during chip-enable is low. Data is latched on the rising
edge of write-enable pulse during chip-enable is low.
Erase and Program Time
Erase and program mode
Min
Typ
*4
Max
Unit
———————————————————————————————————————————————
Chip (128 kB) erase time
Auto erase mode
——————————————————————————————————
Fast high-reliability erase mode
*2, 3
———————————————————————————————————————————————
Chip (128 kB) program time
Fast high-reliability program mode
*3
———————————————————————————————————————————————
Notes: 1. Each values are same for all read access version.
2. Excludes pre-write process before erasure and verify process (6 μs x 128 kB).
3. Excludes system overhead.
4. Ta = 25°C, V
PP
= 12 V, V
CC
= 5 V
5. Theoretical value calculated from fast high-reliability programming flowchart.
(25 μs program + 6 μs verify) x 20 times x 128 kB = 81 second.
1
30
second
0.6
30
second
5
81
*5
second
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