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參數(shù)資料
| 型號： | HN28F101FP-15 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 131072-word ?? 8-bit CMOS Flash Memory |
| 中文描述： | 131072字？？ 8位CMOS閃存 |
| 文件頁數(shù)： | 10/18頁 |
| 文件大?。?/td> | 106K |
| 代理商： | HN28F101FP-15 |
Command Programming/Data Programming/Erase Operation
DC Characteristics
(V
CC
= 5 V ± 10%, V
PP
= 12.0 V ± 0.6 V, Ta = 0 to +70°C)
Parameter
———————————————————————————————————————————————–
Input leakage current
I
LI
—
—
———————————————————————————————————————————————–
Output leakage current
I
LO
—
—
———————————————————————————————————————————————–
Standby V
CC
current
I
SB1
—
—
———————————————————————————————————–
I
SB2
—
—
———————————————————————————————————————————————–
Operating
Read
I
CC1
—
6
V
CC
current
—————————————————————————————–——————
I
CC2
—
10
———————————————————————————————————–—————–
Program
I
CC3
—
2
———————————————————————————————————–—————–
Erase
I
CC4
—
10
———————————————————————–——————–—————–
I
CC5
—
5
———————————————————————————————————————————————–
V
PP
current
Read
I
PP1
—
—
———————————————————————————————————–—————–
Program
I
PP2
—
5
———————————————————————————————————–—————–
Erase
I
PP3
—
35
——————————————————————————————–—————
I
PP4
—
10
———————————————————————————————————————————————–
Input voltage
V
IL
—
———————————————————————————————————–
V
IH
2.2
—
———————————————————————————————————————————————–
Output voltage
V
OL
—
—
———————————————————————————————————–
V
OH
2.4
—
———————————————————————————————————————————————–
Notes: 1. V
CC
/V
PP
power on/off timing
V
CC
must be applied before or simultaneously V
PP
, and removed after or simultaneously V
PP
.
This V
CC
/V
PP
power on/off timing must be satisfied at V
CC
/V
PP
on/off caused by power failure.
Symbol
Min
Typ
Max
Unit
Test condition
2
μA
Vin = 0 V to V
CC
2
μA
Vout = 0 V to V
CC
1
mA
CE
= V
IH
200
μA
CE
= V
CC
15
mA
Iout = 0 mA, f = 1 MHz
30
mA
Iout = 0 mA, f = 8 MHz
10
mA
40
mA
In automatic erase
15
mA
In high-reliability erase
1
mA
V
PP
= 12.6 V
30
mA
In programming
80
mA
In automatic erase
30
mA
In high-reliability erase
– 0.3
*4
0.8
V
V
CC
+ 0.3
*5
V
0.45
V
I
OL
= 2.1 mA
—
V
I
OH
= –400 μA
2. V
PP
must not exceed 14 V including overshoot.
3. An influence may be had upon device reliability if the device is installed or removed while
V
PP
= 12 V.
4. V
IL
min = –1.0 V for pulse width < 20 ns.
5. If V
IH
is over the specified maximum value, programming operation cannot be guaranteed.
0μs min
0μs min
0V
5V
12V
5V
0V
V
CC
V
PP
10
HN28F101 Series
HN28F101 Series
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| HN28F101P-12 | 131072-word ?? 8-bit CMOS Flash Memory |
| HN28F101P-15 | 131072-word ?? 8-bit CMOS Flash Memory |
| HN28F101P-20 | 131072-word ?? 8-bit CMOS Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN28F101FP-20 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:131072-word ?? 8-bit CMOS Flash Memory |
| HN28F101P-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:131072-word ?? 8-bit CMOS Flash Memory |
| HN28F101P-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:131072-word ?? 8-bit CMOS Flash Memory |
| HN28F101P-20 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:131072-word ?? 8-bit CMOS Flash Memory |
| HN28F101R-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:131072-word ?? 8-bit CMOS Flash Memory |
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