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參數(shù)資料
| 型號(hào)： | HN27C4000G |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 524288-Word ?8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM |
| 中文描述： | 524288詞？8-Bit/262144-Word x 16位的CMOS紫外線可擦除只讀存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 11/20頁(yè) |
| 文件大小： | 124K |
| 代理商： | HN27C4000G |
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11
HN27C4000G Series
AC Characteristics
(V
CC
= 6.25 V ± 0.25 V, V
PP
= 12.5 V ± 0.3 V, Ta = 25°C ± 5°C)
Test Conditions
Input pulse levels: 0.45 to 2.4 V
Input rise and fall times:
≤
20 ns
Reference levels for measuring timing: Inputs; 0.8 V, 2.0 V,
Outputs; 0.8 V, 2.0 V
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Address setup time
OE
setup time
t
AS
t
OES
t
DS
t
AH
t
DH
t
DF*1
t
VPS
t
VCS
t
PW
2
—
—
μs
2
—
—
μs
Data setup time
2
—
—
μs
Address hold time
0
—
—
μs
Data hold time
OE
high to output float delay
2
—
—
μs
0
—
130
ns
V
PP
setup time
V
CC
setup time
CE
initial programming
pulse width
CE
setup time
Data valid from
OE
CE
pulse width during data latch
OE
= V
H
setup time
OE
= V
H
hold time
V
PP
hold time
*2
Notes: 1. t
DF
is defined as the time at which the output achieves the open circuit condition and data is no
longer driven.
2. Page program mode will be reset when V
PP
is set to V
CC
or less.
2
—
—
μs
2
—
—
μs
47.5
50.0
52.5
μs
t
CES
t
OE
t
LW
t
OHS
t
OHH
t
VRS
2
—
—
μs
0
—
150
ns
1
—
—
μs
2
—
—
μs
2
—
—
μs
1
—
—
μs
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN27C4000G-10 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:524288-Word ?8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM |
| HN27C4000G-12 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:524288-Word ?8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM |
| HN27C4000G-15 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:524288-Word ?8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM |
| HN27C4001G-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EPROM |
| HN27C4001G-12 | 制造商:Renesas Electronics Corporation 功能描述: |
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