- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371865 > HN1K06FU (Toshiba Corporation) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type PDF資料下載
參數(shù)資料
| 型號(hào)： | HN1K06FU |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| 中文描述： | 東芝場(chǎng)效應(yīng)晶體管硅?頻道馬鞍山類型 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 126K |
| 代理商： | HN1K06FU |
HN1K06FU
2002-01-16
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
HN1K06FU
High Speed Switching Applications
Analog Switch Applications
High input impedance and extremely low drive current.
V
th
is low and it is possible to drive directly at low-voltage CMOS.
: V
th
= 0.5 to 1.5 V
Switching speed is fast.
Suitable for high-density mounting because of a compact package
Maximum Ratings
(Ta 25°C) (Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DS
20
V
Gate-source voltage
V
GSS
10
V
Drain current
I
D
100
mA
Drain power dissipation
P
D
(Note)
200
mW
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note: TOTAL rating
Electrical Characteristics
(Ta 25°C) (Q1, Q2 common)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
10 V, V
DS
0 V
1
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
100 A, V
GS
0 V
20
V
Drain cut-off current
I
DSS
V
DS
20 V, V
GS
0 V
1
A
Gate threshold voltage
V
th
V
DS
3 V, I
D
0.1 mA
0.5
1.5
V
Forward transfer admittance
Y
fs
V
DS
3 V, I
D
10 mA
35
62
mS
Drain-source ON resistance
R
DS (ON)
I
D
10 mA, V
GS
2.5 V
3.5
6.0
Input capacitance
C
iss
V
DS
3 V, V
GS
=0 V, f 1 MHz
14
pF
Reverse transfer capacitance
C
rss
V
DS
3 V, V
GS
=0 V, f 1 MHz
5.3
pF
Output capacitance
C
oss
V
DS
3 V, V
GS
=0 V, f 1 MHz
16
pF
t
on
V
DD
3 V, I
D
10 mA,
V
GS
0 to 2.5 V
0.28
Switching time
t
off
V
DD
3 V, I
D
10 mA,
V
GS
0 to 2.5 V
0.34
s
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2J1C
Weight: 6.8 mg
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN1L02FU | N CHANNEL MOS TYPE, P CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) |
| HN1L03FU | N,P CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) |
| HN1V01HA | COMMON CATHODE DIODE ARRAY|SO |
| HN1V01HB | COMMON CATHODE DIODE ARRAY|SO |
| HN1V02HA | ARRAY OF INDEPENDENT DIODES|SO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN1K06FU_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type High Speed Switching Applications |
| HN1L02FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE, P CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) |
| HN1L02FU_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N·P Channel MOS Type High Speed Switching Applications |
| HN1L03FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching Applications |
| HN1L03FU_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching Applications |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。