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參數(shù)資料
| 型號： | HN1D02FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
| 中文描述： | 硅外延平面型超高速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 218K |
| 代理商： | HN1D02FE |
HN1D02FE
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D02FE
Ultra High Speed Switching Application
z
The HN1D02FU is composed of 2 common cathode units.
z
Low forward voltage
: V
F (3)
= 0.90V (typ.)
z
Fast reverse recovery time : t
rr
= 1.6ns (typ.)
z
Small total capacitance
: C
T
= 0.9pF (typ.)
Absolute Maximum Ratings
(Ta
=
25
°
C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V
RM
85
V
Reverse voltage
V
R
80
V
Maximum (peak) forward current
I
FM
300*
mA
Average forward current
I
O
100*
mA
Surge current (10ms)
I
FSM
2*
A
Power dissipation
P
100**
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55~150
°
C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: These are the Absolute Maximum Ratings for a single diode (Q1, Q2, Q3 or Q4).
Where Unit 1 and Unit 2 are used independently or simultaneously, the Absolute Maximum Ratings per diode
are 75% of those for a single diode.
**: Total rating.
Electrical Characteristics
(Q1, Q2, Q3, Q4 Common; Ta
=
25
°
C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
V
F (1)
V
F (2)
V
F (3)
I
R (1)
―
I
F
= 1mA
―
0.60
―
―
I
F
= 10mA
―
0.72
―
Forward voltage
―
I
F
= 100mA
V
R
= 30V
―
0.90
1.20
V
―
―
―
0.1
Reverse current
I
R (2)
C
T
t
rr
―
V
R
= 80V
V
R
= 0, f = 1MHz
I
F
= 10mA (fig.1)
―
―
0.5
μ
A
Total capacitance
―
―
0.9
―
pF
Reverse recovery time
―
―
1.6
―
ns
1.
2.
3.
4.
5.
6.
ANODE
ANODE
CATHODE
ANODE
ANODE
CATHODE
JEDEC
JEITA
TOSHIBA
Weight: 0.003g (typ.)
―
―
1-2X1B
Unit in mm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN1D02FU | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) |
| HN1D02F | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) |
| HN1D03FU | Ultra High Speed Switching Diode(超高速開關(guān)二極管) |
| HN1D03F | Ultra High Speed Switching Diode(超高速開關(guān)二極管) |
| HN1D04FU | Ultra High Speed Switching Application |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN1D02FE,LF | 制造商:Toshiba America Electronic Components 功能描述:SWITCHING DIODE 80V CC 6 ES6 |
| HN1D02FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) |
| HN1D02FU(T5L,F,T) | 制造商:Toshiba America Electronic Components 功能描述:SWITCHING DIODE 80V CC 6 US6 |
| HN1D02FU_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
| HN1D03F | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Ultra High Speed Switching Application |
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