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參數(shù)資料
| 型號： | HN1C01FY |
| 英文描述： | TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP |
| 中文描述： | 晶體管|晶體管|一對|叩| 50V五（巴西）總裁| 150毫安一（c）|的TSOP |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 138K |
| 代理商： | HN1C01FY |
HN1C01F
2001-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN1C01F
Audio Frequency General Purpose Amplifier Applications
Small package (Dual type)
High voltage and high current
: V
CEO
= 50V, I
C
= 150mA (max)
High h
FE
: h
FE
= 120~400
Excellent h
FE
linearity
: h
FE
(I
C
= 0.1mA) / h
FE
(I
C
= 2mA) = 0.95 (typ.)
Maximum Ratings
(Ta = 25 C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
60
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
150
mA
Base current
I
B
30
mA
Collector power dissipation
P
C
*
300
mW
Junction temperature
T
j
125
C
Storage temperature range
T
stg
55~125
C
* Total rating
Electrical Characteristics
(Ta = 25 C) (Q1,Q2 Common)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
―
V
CB
= 60V, I
E
= 0
―
―
0.1
μA
Emitter cut-off current
I
EBO
―
V
EB
= 5V, I
C
= 0
―
―
0.1
μA
DC current gain
h
FE (Note)
―
V
CE
= 6V, I
C
= 2mA
120
―
400
Collector-emitter
saturation voltage
V
CE (sat)
―
I
C
= 100mA, I
B
= 10mA
―
0.1
0.25
V
Transition frequency
f
T
―
V
CE
= 10V, I
C
= 1mA
80
―
―
MHz
Collector output capacitance
C
ob
―
V
CB
= 10V, I
E
= 0, f = 1MHz
―
2
3.5
pF
Note: h
FE
Classification
Y (Y): 120~240, GR (G): 200~400
( ) Marking Symbol
JEDEC
EIAJ
TOSHIBA
Weight: 0.015g
―
―
2-3N1A
Unit: mm
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