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參數(shù)資料
| 型號： | HN1B04FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | Audio Frequency General Purpose Amplifier Applications |
| 中文描述： | 通用音頻放大器應(yīng)用 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 329K |
| 代理商： | HN1B04FE |
HN1B04FE
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
HN1B04FE
Audio Frequency General Purpose Amplifier Applications
Q1:
High voltage and high current
: V
CEO
= 50V, I
C
= 150mA (max)
z
High h
FE
: h
FE
= 120~400
z
Excellent h
FE
linearity
: h
FE
(I
C
= 0.1mA) / h
FE
(I
C
= 2mA) = 0.95 (typ.)
Q2:
z
High voltage and high current
: V
CEO
=
50V, I
C
=
150mA (max)
z
High h
FE
: h
FE
= 120~400
z
Excellent h
FE
linearity
: h
FE
(I
C
=
0.1mA) / h
FE
(I
C
=
2mA) = 0.95 (typ.)
Q1 Absolute Maximum Ratings
(Ta = 25
°
C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
60
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
150
mA
Base current
I
B
30
mA
Q2 Absolute Maximum Ratings (Ta = 25
°
C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
150
mA
Base current
I
B
30
mA
Q1, Q2 Common Absolute Maximum Ratings
(Ta = 25
°
C)
Characteristic
Symbol
Rating
Unit
Collector power dissipation
P
C
*
100
mW
Junction temperature
T
j
150
°
C
Storage temperature range
T
stg
55~150
°
C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
JEDEC
JEITA
TOSHIBA
Weight: 3.0mg (typ.)
―
―
2-2N1G
Unit: mm
1
2
3
4
5
1D
Type Name
hFE Rank
1
2
3
4
5
6
Q1
Q2
Equivalent Circuit (Top View)
Marking
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN1B04FU | NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
| HN1B04F | Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
| HN1B04F_07 | Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
| HN1B26FS | General-Purpose Amplifier Applications |
| HN1C01FE | Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN1B04FE-GR(5L,F,T | 制造商:Toshiba America Electronic Components 功能描述:TRAN PNP/NPN -50V -0.15A ES6 |
| HN1B04FE-Y(T5L,F,T | 制造商:Toshiba America Electronic Components 功能描述:TRAN PNP/NPN -50V -0.15A ES6 |
| HN1B04FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
| HN1B04FUGR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP |
| HN1B04FU-GR | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application |
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