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| 型號： | HMMDB3 |
| 英文描述： | Trigger Diodes |
| 中文描述： | 觸發(fā)二極管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 19K |
| 代理商： | HMMDB3 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMMDB3
TRIGGER DIODES
Spec. No. : Preliminary Data
Issued Date : 2000.08.01
Revised Date : 2000.10.01
Page No. : 1/2
HSMC Product Specification
Description
High reliability glass passivation insuring parameter stability and against contamination.
Absolute Maximum Ratings
(Ta=25
°
Maximum Temperatures
Storage Temperature............................................................................................ -40 ~ +125
°
C
Junction Temperature........................................................................................... -40 ~ +110
°
C
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 150 mW
Maximum Voltages and Currents
Breakover Voltage .............................................................................................................. 32 V
Breakover Voltage symmetry..............................................................................................
±
3 V
Repetitive peak on-state Current.......................................................................................... 2 A
Characteristics
(Ta=25
°
C)
Symbol
VBO
[ |+VBO| ]-[ |-VBO| ]
IV±I
VO
IBO
tr
IB
Min.
28
-
5
5
-
-
-
Typ.
32
-
-
-
-
1.5
-
Max.
36
±
3
-
-
50
-
10
Unit
V
V
V
V
uA
uS
uA
Test Conditions
C=22nF
C=22nF
I=[ IBO to IF=10mA ]
C=22nF
VB=0.5 VBO max
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
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