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參數(shù)資料
| 型號(hào)： | HMMC-5038 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 放大器 |
| 英文描述： | 37000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 0.0642 X 0.0299 INCH, DIE |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 221K |
| 代理商： | HMMC-5038 |
1
Description
The HMMC-5038 MMIC is a
high–gain low–noise amplifier
(LNA) designed for communica-
tion receivers that operate from
37 GHz to 40 GHz. The gain of
this four stage LNA can be ad-
justed by altering the gate bias
of the output two, or three stag-
es while maintaining optimum
noise figure bias for the input
stage(s). Large FETs provide
high power handing capability
to avoid power compression.
The backside of the chip is both
RF and DC ground. This helps
simplify the assembly process
and reduce assembly related
performance variations and
costs.
The HMMC-5038 is fabricated
using a PHEMT integrated cir-
cuit structure that provides
good noise and gain perfor-
mance.
Agilent HMMC-5038
38 GHz LNA
Data Sheet
Chip Size:
1630 × 760 m (64.2 × 29.9 mils)
Chip Size Tolerance:
±10 m (±0.4 mils)
Chip Thickness:
127 ± 15 m (5.0 ± 0.6 mils)
Pad Dimensions:
80 × 80 m (3.1 × 3.1 mils)
Absolute Maximum Ratings[1]
1. Absolute maximum ratings for continuous operation unless otherwise noted.
Symbol
Parameters/Conditions
Min.
Max.
Units
VD1,2-3-4
Drain Supply Voltages
5
Volts
VG1,2,3-4
Gate Supply Voltages
3.0
0
Volts
IDD
Total Drain Current
300
mA
Pin
RF Input Power
15
dBm
Tch
Channel Temperature[2]
2. Refer to DC Specifications / Physical Properties table for derating information.
160
°C
TA
Backside Ambient Temperature
55
+125
°C
Tst
Storage Temperature
65
+165
°C
Tmax
Max. Assembly Temperature
310
°C
Notes:
Features
Low Noise Figure: 4.8 dB
Frequency Range:
37 - 40 GHz
High Gain (Adjustable):
3 v, 120 mA @ 23 dB Gain
3 v, 80 mA @ 20 dB Gain
50 Input/Output Matching
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