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參數(shù)資料
| 型號： | HMMC-2007 |
| 元件分類： | 開關(guān) |
| 英文描述： | 0 MHz - 8000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 1.4 dB INSERTION LOSS |
| 封裝： | CHIP |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 90K |
| 代理商： | HMMC-2007 |
2
HMMC-2007 DC Specifications/Physical Properties (TA= 25°C)
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
ISEL-10V
Leakage Current @ -10 V
A
200
ISEL+10V
Leakage Current @ +10V
A20
Pinchoff Voltage (V
SEL2 = Vp, VRFout2 = +2V,
Vp
IRFout2 = 4 mA, VSEL1 = -10 V, VRFout1 = open circuit,
V
-6.75
-3.00
VRFin = GND
BV
Breakdown Voltage (Test FET w/ VD = VS = GND, IG = -50 A)
V
-13.0
RF Specifications (T
A = 25 °C, Zo= 50, Vsel-high = +10V, V
sel-low = -10V)
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
BW
Guaranteed Operating Bandwidth
GHz
DC
8.0
IL
Insertion Loss, RF
in to Selected RFout (ON throw), 6 GHz
dB
1.1
1.4
ISO
Isolation, RF
in to Unselected RFout (OFF throw), 6 GHz
dB
38
RLin
Input Return Loss @ 6 GHz
dB
25
RLout-ON
Output Return Loss, ON throw @ 6 GHz
dB
25
RLout-OFF
Output Return Loss, OFF throw @ 6 GHz
dB
18
P
-1dB
Input Power where IL increases by 1 dB, f
in = 2 GHz
dBm
27
ts
Switching Speed, 10% – 90% RF Envelope, fin = 2 GHz
s20
Absolute Maximum Ratings[1]
Symbol
Parameters/Conditions
Units
Min.
Max.
V
sel
Select Voltages 1 & 2
V
-10.5
+10.5
P
in
RF Input Power
dBm
27
Top
Operating Temperature
°C
-55
+125
Tstg
Storage Temperature
°C
-65
+165
Tmax
Max. Assembly Temperature
°C
+200
P
unsel
Power into Unselected Output
dBm
27
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
TA = 25°C except for Tch, Tstg, and Tmax.
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