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參數(shù)資料
| 型號： | HMD16M36M12EG-5 |
| 廠商： | Hanbit Electronics Co.,Ltd. |
| 英文描述： | 64Mbyte (16Mx36) EDO/with Parity Mode 4K Ref. 72pin-SIMM Design |
| 中文描述： | 64Mbyte（16Mx36）江戶/有校驗(yàn)?zāi)Ｊ?K的參考。 72pin，上海藥物研究所設(shè)計(jì) |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 93K |
| 代理商： | HMD16M36M12EG-5 |
HANBit HMD16M36M12EG
URL:www.hbe.co.kr HANBit Electronics Co.,Ltd.
REV.1.0(August.2002)
- 4 -
I
CC2
: Standby Current ( /RAS=/CAS=V
IH
)
I
CC3
: /RAS Only Refresh Current * ( /CAS=V
IH
, /RAS, Address cycling @t
RC
=min )
I
CC4
: Fast Page Mode Current * (/RAS=V
IL
, /CAS, Address cycling @t
PC
=min )
I
CC5
: Standby Current (/RAS=/CAS=Vcc-0.2V )
I
CC6
: /CAS-Before-/RAS Refresh Current * (/RAS and /CAS cycling @t
RC
=min )
I
IL
: Input Leakage Current (Any input 0V
≤
V
IN
≤
6.5V, all other pins not under test = 0V)
I
OL
: Output Leakage Current (Data out is disabled, 0V
≤
V
OUT
≤
5.5V
V
OH
: Output High Voltage Level (I
OH
= -5mA )
V
OL
: Output Low Voltage Level (I
OL
= 4.2mA )
*
NOTE
: I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the
output open. I
CC
is specified as an average current. In I
CC1
and I
CC3
, address cad be changed maximum once
while /RAS=V
IL
. In I
CC4
, address can be changed maximum once within one page mode cycle.
CAPACITANCE
( T
A
=25
o
C, Vcc = 5V, f = 1Mz )
DESCRIPTION
SYMBOL
MIN
MAX
UNITS
Input Capacitance (A0-A11)
C
IN1
-
50
pF
Input Capacitance (/W)
C
IN2
-
66
pF
Input Capacitance (/RAS0)
C
IN3
-
38
pF
Input Capacitance (/CAS0-/CAS3)
C
IN4
-
24
pF
Input/Output Capacitance (DQ0-31)
C
DQ1
-
17
pF
AC CHARACTERISTICS
( 0
o
C
≤
T
A
≤
70oC , Vcc = 5V
±
10%, See notes 1,2.)
-5
-6
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
UNIT
Random read or write cycle time
t
RC
84
104
ns
Access time from /RAS
t
RAC
50
60
ns
Access time from /CAS
t
CAC
13
15
ns
Access time from column address
t
AA
25
30
ns
/CAS to output in Low-Z
t
CLZ
3
3
ns
Output buffer turn-off delay
t
OFF
3
13
3
15
ns
Transition time (rise and fall)
t
T
1
50
1
50
ns
/RAS precharge time
t
RP
30
40
ns
/RAS pulse width
t
RAS
50
10K
60
10K
ns
/RAS hold time
t
RSH
13
15
ns
/CAS hold time
t
CSH
38
45
ns
/CAS pulse width
t
CAS
8
10K
10
10K
ns
/RAS to /CAS delay time
t
RCD
20
37
20
45
ns
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HMD16M36M12EG-6 | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:64Mbyte (16Mx36) EDO/with Parity Mode 4K Ref. 72pin-SIMM Design |
| HMD16M36M12G | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:64Mbyte (16Mx36) FP/with Parity Mode 4K Ref. 72pin-SIMM Design |
| HMD16M36M12G-5 | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:64Mbyte (16Mx36) FP/with Parity Mode 4K Ref. 72pin-SIMM Design |
| HMD16M36M12G-6 | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:64Mbyte (16Mx36) FP/with Parity Mode 4K Ref. 72pin-SIMM Design |
| HMD16M64B8A-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The HSD16M64B8A is a 16M x 64 bit Synchronous Dynamic RAM high density memory module. |
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