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參數(shù)資料
| 型號(hào)： | HMC999 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 10 MHz - 10000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | 3.66 X 1.91 MM, 0.10 MM HEIGHT, ROHS COMPLIANT, DIE-8 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 612K |
| 代理商： | HMC999 |
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC999
v00.0611
GaN MMIC 10 WATT POWER AMPLIFIER,
0.01 - 10 GHz
General Description
Features
Functional Diagram
The hmC999 is a Gan hemT mmiC Distributed
power Amplifier which operates between 0.01 and 10
Ghz. The amplifier provides 11 dB of gain, 47 dBm
output ip3 and 38 dBm of output power at 1 dB gain
compression while requiring 1100 mA from a +48 V
supply. The hmC999 amplifier provides 10 watts of
saturated power in a chip area only 7 mm2, equating
to a power density of 1.5 w/mm2 over 3 decades of
bandwidth. All data is taken with the chip connected
via two 25 mm (1 mil) wire bonds of minimal length
0.31 mm (12 mils).
high p1dB output power: 38 dBm
high psat output power: 40 dBm
high output ip3: 47 dBm
high Gain: 11 dB
supply Voltage: +28V, +40V or +48V @ 1100 mA
50 ohm matched input/output
Die size: 3.66 x 1.91 x 0.1 mm
Typical Applications
The hmC999 is ideal for:
Test Instrumentation
Military Communications
Jammers and Decoys
Radar, EW & ECM Subsystems
Space
Electrical Specifications, T
A = +25°C
[2]
, Vdd = +48 V, Vgg2 = +22 V, Idd = 1100 mA* [1]
parameter
min.
Typ.
max.
min.
Typ.
max.
min.
Typ.
max.
Units
frequency range
0.01 - 2
2 - 6
6 - 10
Ghz
Gain
10.5
12.5
9
11
8.5
10.5
dB
Gain flatness
±0.8
±0.4
±0.7
dB
Gain Variation over Temperature
0.017
0.02
0.025
dB/ °C
input return loss
20
18
15
dB
output return loss
13
15
14
dB
output power for 1 dB Compression (p1dB)
36.5
38.5
36
38
34.5
36.5
dBm
saturated output power (psat)
40.5
40
39.5
dBm
output Third order intercept (ip3)
48
47
45.5
dBm
supply Current
(idd) (Vdd = 48V, Vgg = 22V Typ.)
1100
mA
* Adjust Vgg1 between -5 to 0 V to achieve Idd = 1100 mA typical.
[1] S parameter and OIP3 data taken at Idd=1000mA
[2] Probe station chuck temperature adjusted to bring backside of die to +25
°C
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