參數(shù)資料
型號: HMC920LP5E
廠商: Hittite Microwave Corporation
文件頁數(shù): 21/26頁
文件大小: 1291K
描述: IC CTRLR ACTIVE BIAS 32QFN
標(biāo)準(zhǔn)包裝: 1
功能: 有源偏壓控制器
輸入電壓: 5 V ~ 16.5 V
電流 - 輸出: 500mA
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 32-VFQFN 裸露焊盤
供應(yīng)商設(shè)備封裝: 32-QFN(5x5)
包裝: 標(biāo)準(zhǔn)包裝
其它名稱: 1127-1077-6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC920LP5E
v07.1013
ACTIVE BIAS CONTROLLER
Operation Modes
HMC920LP5E can be configured to bias both enhancement and depletion mode external amplifiers. The mode of
operation can be selected by setting two pins (VNEGFB, VGATEFB) as tabulated in Table-1. The connection to the
VNEGIN should be adjusted accordingly.
In order not to bias external amplifier in a wrong region, please make sure that the correct mode of operation is
selected before powering up HMC920LP5E.
HMC920LP5E does not allow the internal negative voltage generator to work if an enhancement mode is selected.
Therefore, if VNEGFB is left floating while VGATEFB is grounded, HMC920LP5E will stay in standby mode.
Please note that the external negative voltage should be between -2.5V to -3.5V for HMC920LP5E to operate.
Table 1. Mode Selection
VNEGFB
VGATEFB
VNEGIN
Description
MODE1
(Depletion/Master Mode)
FLOAT
FLOAT
Connected to
VNEGOUT
Depletion mode transistor. Internal negative voltage generator is
active and generates -2.5V. Sample application schematic given
shown in Fig.4a.
MODE2
(Depletion/Slave Mode)
GND
FLOAT
Connected to
External VSS
Depletion mode transistor. Internal negative voltage generator is
disabled. An external negative voltage less than -2.3V should be
connected to VNEGIN. Sample application schematic given shown
in Fig.4b.
---
FLOAT
GND
N/A
Not allowed. HMC920LP5E stays in standby.
MODE3
(Enhancement Mode)
GND
GND
Connected to
GND
Enhancement mode transistor. Internal negative voltage generator is
disabled. Sample application schematic given shown in Fig.5.
Figure 3. Daisy Chain Operation
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