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參數(shù)資料
| 型號： | HMC815LC5 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 上/下變頻器 |
| 英文描述： | 21000 MHz - 27000 MHz RF/MICROWAVE UP CONVERTER |
| 封裝： | 5 X 5 MM, ROHS COMPLIANT, LEADLESS PACKAGE-32 |
| 文件頁數(shù)： | 5/16頁 |
| 文件大?。?/td> | 988K |
| 代理商： | HMC815LC5 |
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9 - 13
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC815LC5
v01.0110
GaAs MMIC I/Q UPCONVERTER
21 - 27 GHz
Outline Drawing
NOTes:
1. PAcKAGe BODY mATeriAL: ALUmiNA
2. LeAD AND GrOUND PADDLe PLATiNG: 30 - 80 micrOiNcHes
GOLD Over 50 micrOiNcHes miNimUm NicKLe
3. DimeNsiONs Are iN iNcHes [miLLimeTers]
4. LeAD sPAciNG TOLerANce is NON-cUmULATive
5. PAcKAGe WArP sHALL NOT exceeD 0.05mm DATUm
6. ALL GrOUND LeADs AND GrOUND PADDLe mUsT Be sOLDereD
TO PcB rF GrOUND
Absolute Maximum Ratings
Drain Bias voltage (vdd1, 2, 3)
5.5v
Gate Bias voltage (vgg)
-3v to 0v
iF input Power (iF1, iF2)
20 dBm
LO Drive (LO iN)
+13 dBm
channel Temperature
170 °c
continuous Pdiss (T = 85°c)
(derate 21.4 mW/°c above 85°c)
1.82 W
Thermal resistance
(channel to ground paddle)
46.7 °c/W
storage Temperature
-65 to +150 °c
Operating Temperature
-55 to +85 °c
eLecTrOsTATic seNsiTive Device
OBserve HANDLiNG PrecAUTiONs
LO Freq. (GHz)
nLO spur @ iF Port
1
2
3
11.00
38
6
23
11.25
35
9
24
11.50
36
15
26
11.75
31
9
26
12.00
28
9
31
12.25
28
9
35
12.75
28
4
34
13.25
38
7
29
13.75
30
6
xx
14.24
20
-3
xx
14.75
16
-3
xx
LO Power = +4 dBm
All values in dBc below input LO level measured at rF port.
Harmonics of LO @ RF Output
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