參數(shù)資料
型號: HMC789ST89E
廠商: HITTITE MICROWAVE CORP
元件分類: 放大器
英文描述: 700 MHz - 2800 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝: ROHS COMPLIANT, PLASTIC, SOT-89, SMT, 4 PIN
文件頁數(shù): 10/16頁
文件大?。?/td> 865K
代理商: HMC789ST89E
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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8
8 - 3
Output IP3 vs. Temperature @ 900 MHz
Pout = 10 dBm Each Tone
Output IP3 vs.
Output Power @ 900 MHz
Noise Figure vs. Temperature @ 900 MHz
Gain, Power & IP3 vs.
Supply Voltage @ 900 MHz
Reverse Isolation vs.
Temperature @ 900 MHz
Power Compression @ 900 MHz
HMC789ST89E
v00.0409
InGaP HBT GAIN BLOCK MMIC
AMPLIFIER, 0.7 - 2.8 GHz
30
35
40
45
50
0.7
0.8
0.9
1
1.1
+25 C
+85 C
- 40 C
IP3
(dB)
FREQUENCY (GHz)
30
35
40
45
50
0
2
4
6
8
10
12
14
16
18
+25 C
+85 C
- 40 C
IP3
(dB)
SINGLE TONE POUT (dBm)
0
2
4
6
8
0.75
0.8
0.85
0.9
0.95
1
+25 C
+85 C
- 40 C
N
F
(d
B
)
FREQUENCY (GHz)
-40
-30
-20
-10
0
0.7
0.8
0.9
1
1.1
+25 C
+85 C
- 40 C
IS
O
LA
T
IO
N
(d
B
)
FREQUENCY (GHz)
10
20
30
40
50
4.5
5
5.5
Gain
P1dB
OIP3
G
A
IN
(d
B
),
P
1d
B
(d
Bm),
OIP3
(dBm)
SUPPLY VOLTAGE
0
10
20
30
40
50
-8
-4
0
4
8
12
Pout
Gain
PAE
P
ou
t(
dB
m
),
G
A
IN
(d
B
),
P
A
E
(%
)
INPUT POWER (dBm)
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