參數(shù)資料
型號(hào): HMC667LP2
廠商: HITTITE MICROWAVE CORP
元件分類: 放大器
英文描述: 2300 MHz - 2700 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
封裝: 2 X 2 MM, PLASTIC, SMT, DFN-6
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 299K
代理商: HMC667LP2
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC667LP2 / 667LP2E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
v02.1110
General Description
Features
Functional Diagram
Typical Applications
The HMC667LP2(E) is ideal for:
WiMAX, WiBro & Fixed Wireless
SDARS & WLAN Receivers
Infrastructure & Repeaters
Access Points
Telematics & DMB
Electrical Specifications, T
A = +25° C
Parameter
Vdd = +3 Vdc
Vdd = +5 Vdc
Units
Min.
Typ.
Max.
Min.
Typ.
Max.
Frequency Range
2300 - 2700
MHz
Gain
14
17.5
16
19
dB
Gain Variation Over Temperature
0.01
dB/ °C
Noise Figure
0.9
1.2
0.75
1.1
dB
Input Return Loss
10
12
dB
Output Return Loss
15
14
dB
Output Power for 1 dB
Compression (P1dB)
9.5
11.5
13.5
16.5
dBm
Saturated Output Power (Psat)
12.5
17
dBm
Output Third Order Intercept (IP3)
22
29.5
dBm
Supply Current (Idd)
24
32
59
75
mA
The HMC667LP2(E) is a GaAs PHEMT MMIC Low
Noise Amplifier that is ideal for WiMAX, WLAN and
fixed wireless receivers operating between 2300
and 2700 MHz. This self-biased LNA has been
optimized to provide 0.75 dB noise figure, 19 dB
gain and +29.5 dBm output IP3 from a single supply
of +5V. Input and output return losses are excellent
and the LNA requires minimal external matching and
bias decoupling components. The HMC667LP2(E)
can also operate from a +3V supply for lower power
applications.
Low Noise Figure: 0.75 dB
High Gain: 19 dB
High Output IP3: +29.5 dBm
Single Supply: +3V to +5V
6 Lead 2x2mm DFN Package: 4 mm2
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