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參數(shù)資料
| 型號(hào)： | HMC618LP3 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 1200 MHz - 2200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, PLASTIC, SMT, 16 PIN |
| 文件頁(yè)數(shù)： | 1/14頁(yè) |
| 文件大?。?/td> | 996K |
| 代理商： | HMC618LP3 |
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC618LP3 / 618LP3E
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 1.2 - 2.2 GHz
v08.1210
General Description
Features
Functional Diagram
Noise figure: 0.75 dB
Gain: 19 dB
oip3: 36 dBm
single supply: +3V to +5V
50 ohm matched input/output
16 lead 3x3mm smT package: 9 mm2
Typical Applications
Electrical Specifications
T
A = +25° C, Rbias = 470 Ohm for Vdd1 = Vdd2 = 5V
parameter
Vdd = 5 Vdc
Units
min.
Typ.
max.
min.
Typ.
max.
min.
Typ.
max.
frequency range
1200 - 1700
1700 - 2000
2000 - 2200
mHz
Gain
19
23
16
19
13.5
17
dB
Gain Variation over Temperature
0.012
0.008
dB/°C
Noise figure
0.65
0.85
0.75
1.1
0.85
1.15
dB
input return loss
22.5
18
19.5
dB
output return loss
13
12.5
10
dB
output power for 1 dB
Compression (p1dB)
14.5
19
16.5
20
18
20
dBm
saturated output power (psat)
20.5
dBm
output Third order intercept (ip3)
33.5
35
35.5
dBm
supply Current (idd)
89
118
89
118
89
118
mA
* rbias resistor sets current, see application circuit herein
The HmC618lp3e is a GaAs pHemT mmiC
low Noise Amplifier that is ideal for Cellular/3G and
lTe/wimAX/4G
basestation
front-end
receivers
operating between 1.2 - 2.2 GHz. The amplifier has
been optimized to provide 0.75 dB noise figure,
19 dB gain and +36 dBm output ip3 from a single
supply of +5V. input and output return losses are
excellent and the lNA requires minimal external
matching and bias decoupling components. The
HmC618lp3e shares the same package and pinout
with the HmC617lp3e 0.55 - 1.2 GHz lNA. The
HmC618lp3e can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the lNA for each application. The
HmC618lp3(e) offers improved noise figure versus
the previously released HmC375lp3(e) and the
HmC382lp3(e).
The HmC618lp3e is ideal for:
Cellular/3G and lTe/wimAX/4G
BTs & infrastructure
repeaters and femto Cells
public safety radios
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC618LP3_11 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz |
| HMC618LP3E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA ADJ IDS 16-QFN |
| HMC618LP3ETR | 制造商:Hittite Microwave Corp 功能描述:HMC618 Series 1.2 - 2.2 GHz GaAs SMT pHEMT Low Noise Amplifier - QFN-16 |
| HMC619 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz |
| HMC619_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz |
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