參數(shù)資料
型號: HMC536MS8G
廠商: 美國訊泰微波有限公司上海代表處
英文描述: GaAs MMIC POSITIVE CONTROL T/R SWITCH, DC - 6.0 GHz
中文描述: 砷化鎵微波單片集成電路陽性對照T / R開關,直流- 6.0吉赫
文件頁數(shù): 1/6頁
文件大小: 198K
代理商: HMC536MS8G
14
S
14 - 268
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC536MS8G
GaAs MMIC POSITIVE CONTROL
T/R SWITCH, DC - 6.0 GHz
v00.1104
General Description
Features
Functional Diagram
Input P0.1dB: +34 dBm @ +5V
Insertion Loss: 0.5 dB
Positive Control: +3V or +5V
MS8G SMT Package, 14.8 mm
2
Isolation: 27 dB
Very Fast Switching Speed
Typical Applications
The HMC536MS8G is ideal for:
Cellular/PCS/3G Infrastructure
ISM/MMDS/WiMAX
CATV/CMTS
Test Instrumentation
The HMC536MS8G is a DC to 6 GHz GaAs MMIC
T/R switch in an 8 lead MSOP8G surface mount
package with an exposed ground paddle. The
switch is ideal for cellular/PCS/3G basestation
applications featuring low 0.5 dB insertion
loss and +55 dBm input IP3. Power handling
is excellent up through 6 GHz with the switch
offering a P0.1dB compression point of +29
dBm at +3 volts control. On-chip circuitry allows
positive voltage control of 0/+3 volts or 0/+5 volts
at very low DC currents.
Electrical Specifications,
T
A
= +25° C, Vctl = 0/+3 Vdc to +5 Vdc, 50 Ohm System
Parameter
Frequency
Min.
Typ.
Max.
Units
Insertion Loss
DC - 3.0 GHz
DC - 4.5 GHz
DC - 6.0 GHz
0.5
0.6
0.7
0.8
0.9
1.0
dB
dB
dB
Isolation (RFC to RF1/RF2)
DC - 4.0 GHz
4.0 - 5.0 GHz
5.0 - 6.0 GHz
23
26
27
27
30
32
dB
dB
dB
Return Loss
DC - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 6.0 GHz
25
20
12
dB
dB
dB
Input Power for 0.1 dB Compression (Vctl = 3V)
(Vctl = 5V)
0.5 - 6.0 GHz
0.5 - 6.0 GHz
27
32
29
34
dBm
dBm
Input Third Order Intercept (Vctl = 3V, 5V)
(Two-Tone Input Power = +7 dBm Each Tone)
0.5 - 1.0 GHz
1.0 - 3.0 GHz
3.0 - 6.0 GHz
56
52
48
dBm
dBm
dBm
Switching Speed tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 6.0 GHz
15
30
ns
ns
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