參數(shù)資料
型號(hào): HMC519
廠商: 美國訊泰微波有限公司上海代表處
英文描述: GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 18 - 32 GHz
中文描述: GaAs PHEMT MMIC低噪聲放大器,18 - 32千兆赫
文件頁數(shù): 1/6頁
文件大?。?/td> 343K
代理商: HMC519
A
1
1 - 174
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC519
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 18 - 32 GHz
v00.0904
General Description
Features
Functional Diagram
The HMC519 chip is a high dynamic range GaAs
PHEMT MMIC Low Noise Amplifier (LNA) which
covers the 18 to 32 GHz frequency range. The
HMC519 provides 15 dB of small signal gain, 2.8 dB
of noise figure and has an output IP3 greater than
23 dBm. The chip can easily be integrated into hy-
brid or MCM assemblies due to its small size. All data
is tested with the chip in a 50 Ohm test fixture con-
nected via 0.075 mm (3 mil) ribbon bonds of minimal
length 0.31 mm (12 mil). Two 0.025 mm (1 mil) diameter
bondwires may also be used to make the RFIN and
RFOUT connections.
Noise Figure: 2.8 dB
Gain: 15 dB
OIP3: 23 dBm
Single Supply: +3V @ 65 mA
50 Ohm Matched Input/Output
Electrical Specifications,
T
A
= +25° C, Vdd 1, 2, 3 = +3V
Typical Applications
The HMC519 is ideal for use as either a LNA or driver
amplifier for:
Point-to-Point Radios
Point-to-Multi-Point Radios & VSAT
Test Equipment & Sensors
Military & Space
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
18 - 28
28 - 32
GHz
Gain
12
15
11
14
dB
Gain Variation Over Temperature
0.015
0.025
0.015
0.025
dB/ °C
Noise Figure
2.8
3.5
3.5
4.5
dB
Input Return Loss
13
9
dB
Output Return Loss
12
12
dB
Output Power for 1 dB Compression (P1dB)
9
12
10
14
dBm
Saturated Output Power (Psat)
15
18
dBm
Output Third Order Intercept (IP3)
23
26
dBm
Supply Current (Idd)(Vdd = +3V)
65
65
mA
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