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參數(shù)資料
| 型號： | HMC481MP86 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | Power Inductor; Series:SDR1006; Inductance:2.2mH; Inductance Tolerance:+/- 10 %; Q Factor:31; Self Resonant Frequency:1.5MHz; Package/Case:101; Terminal Type:PCB Surface Mount; Core Material:Ferrite DR; Current Rating:0.16A |
| 中文描述： | SiGe HBT增益塊MMIC放大器，直流- 5.0吉赫 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 205K |
| 代理商： | HMC481MP86 |
MICROWAVE CORPORATION
8 - 256
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
8
HMC481MP86
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
v00.0603
Gain, Power & OIP3 vs. Supply Voltage
for Constant Id= 74 mA @ 850 MHz
P1dB vs. Temperature
Psat vs. Temperature
Output IP3 vs. Temperature
Vcc vs. Icc Over Temperature for
Fixed Vs= 8V, R
BIAS
= 39 Ohms
0
2
4
6
8
10
12
14
16
18
20
22
24
0
1
2
3
4
5
+25 C
+85 C
-40 C
P
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
24
0
1
2
3
4
5
+25 C
+85 C
-40 C
P
FREQUENCY (GHz)
16
18
20
22
24
26
28
30
32
34
36
0
1
2
3
4
5
+25 C
+85 C
-40 C
O
FREQUENCY (GHz)
0
2
4
6
8
10
12
16
20
24
28
32
36
6
7
8
9
10
11
12
Psat
OIP3
G
Vs (Vdc)
58
60
62
64
66
68
70
72
74
76
78
80
82
84
4.8
4.9
5
5.1
5.2
5.3
5.4
5.5
5.6
I
Vcc (Vdc)
+85 C
+25 C
-40 C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC481MP86_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz |
| HMC481MP86E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP HBT 5GHZ MICRO-P |
| HMC481MP86ETR | 制造商:Hittite Microwave Corp 功能描述:HMC481 Series DC - 5.0 GHz SiGe HBT Gain Block MMIC Amplifier - MICRO-XPAC |
| HMC481ST89 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz |
| HMC481ST89_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz |
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