參數(shù)資料
型號(hào): HMC479MP86
廠商: 美國(guó)訊泰微波有限公司上海代表處
英文描述: SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
中文描述: SiGe HBT增益塊MMIC放大器,直流- 5.0吉赫
文件頁(yè)數(shù): 5/6頁(yè)
文件大?。?/td> 201K
代理商: HMC479MP86
MICROWAVE CORPORATION
8 - 252
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
8
HMC479MP86
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
v00.0603
Application Circuit
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
3
RFOUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins must be connected to RF/DC ground.
Recommended Component Values for Key Application Frequencies
Component
Frequency (MHz)
50
900
1900
2200
2400
3500
5000
L1
270 nH
56 nH
18 nH
18 nH
15 nH
8.2 nH
6.8 nH
C1, C2
0.01 μF
100 pF
100 pF
100 pF
100 pF
100 pF
100 pF
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. R
BIAS
provides DC bias stability over temperature.
Recommended Bias Resistor Values
for Icc= 72 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
5V
6V
8V
10V
12V
R
BIAS
V
ALUE
13
27
51
82
110
R
BIAS
P
OWER
R
ATING
1/8 W
1/4 W
1/2 W
1/2 W
1 W
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HMC479ST89 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
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HMC481MP86 Power Inductor; Series:SDR1006; Inductance:2.2mH; Inductance Tolerance:+/- 10 %; Q Factor:31; Self Resonant Frequency:1.5MHz; Package/Case:101; Terminal Type:PCB Surface Mount; Core Material:Ferrite DR; Current Rating:0.16A
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