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參數(shù)資料
| 型號(hào)： | HMC478SC70 |
| 廠商： | 美國(guó)訊泰微波有限公司上海代表處 |
| 英文描述： | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz |
| 中文描述： | SiGe HBT增益塊MMIC放大器，直流- 4千兆赫 |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 271K |
| 代理商： | HMC478SC70 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+6.0 Vdc
Collector Bias Current (Icc)
100 mA
RF Input Power (RFin)(Vcc = +2.4 Vdc)
+5 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 9 mW/°C above 85 °C)
0.583 W
Thermal Resistance
(junction to lead)
111.5 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1C
Part Number
Package Body Material
Lead Finish
MSL Rating
Package Marking
HMC478SC70
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
[1]
478
HMC478SC70E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
[2]
478
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
Package Information
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC478SC70
/
478SC70E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
v00.0607
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD MATERIAL: COPPER ALLOY
3. LEAD PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
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| HMC478SC70E | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz |
| HMC478ST89 | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz |
| HMC478ST89E | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz |
| HMC479MP86 | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz |
| HMC479ST89 | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC478SC70_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz |
| HMC478SC70E | 功能描述:IC GAIN BLOCK AMP SC70 RoHS:是 類別:RF/IF 和 RFID >> RF 放大器 系列:SIGe 標(biāo)準(zhǔn)包裝:3,000 系列:- 頻率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音數(shù)據(jù):1.3dB RF 型:CDMA，TDMA，PCS 電源電壓:2.7 V ~ 5 V 電流 - 電源:60mA 測(cè)試頻率:2GHz 封裝/外殼:0505（1412 公制） 包裝:帶卷 (TR) |
| HMC478SC70ETR | 制造商:Hittite Microwave Corp 功能描述:IC GAIN BLOCK AMP SC70 制造商:Hittite Microwave Corp 功能描述:HMC478 Series DC - 4 GHz SiGe HBT Gain Block MMIC Amplifier - SC70 |
| HMC478ST89 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz |
| HMC478ST89_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz |
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