- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄367213 > HMC478MP86 (美國(guó)訊泰微波有限公司上海代表處) SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz PDF資料下載
參數(shù)資料
| 型號(hào)： | HMC478MP86 |
| 廠商： | 美國(guó)訊泰微波有限公司上海代表處 |
| 英文描述： | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz |
| 中文描述： | SiGe HBT增益塊MMIC放大器，直流- 4.0吉赫 |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 218K |
| 代理商： | HMC478MP86 |
8
A
8 - 369
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC478MP86
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
v00.1004
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+6.0 Vdc
Collector Bias Current (Icc)
100 mA
RF Input Power (RFin)(Vcc = +4.3 Vdc)
+5 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 9 mW/°C above 85 °C)
0.583 W
Thermal Resistance
(junction to lead)
111.5 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1C
%,%#42/34!4)#3%.3)4)6%$%6)#%
/"3%26%(!.$,).'02%#!54)/.3
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
7. THE MICRO-P PACKAGE IS DIMENSIONALLY COMPATABLE WITH
THE “MICRO-X PACKAGE”
8. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMC478SC70 | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz |
| HMC478SC70E | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz |
| HMC478ST89 | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz |
| HMC478ST89E | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz |
| HMC479MP86 | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC478MP86_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz |
| HMC478MP86E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP HBT 4GHZ MICRO-P |
| HMC478SC70 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz |
| HMC478SC70_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz |
| HMC478SC70E | 功能描述:IC GAIN BLOCK AMP SC70 RoHS:是 類別:RF/IF 和 RFID >> RF 放大器 系列:SIGe 標(biāo)準(zhǔn)包裝:3,000 系列:- 頻率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音數(shù)據(jù):1.3dB RF 型:CDMA，TDMA，PCS 電源電壓:2.7 V ~ 5 V 電流 - 電源:60mA 測(cè)試頻率:2GHz 封裝/外殼:0505（1412 公制） 包裝:帶卷 (TR) |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。