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參數(shù)資料
| 型號： | HMC476SC70E |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz |
| 中文描述： | SiGe HBT增益塊MMIC放大器，直流- 6千兆赫 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 274K |
| 代理商： | HMC476SC70E |
D
5
5 - 92
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pin Number
Function
Description
Interface Schematic
1, 2, 4, 5
GND
These pins must be connected to RF/DC ground.
3
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
6
RFOUT
RF output and DC Bias (Vcc) for the output stage.
Application Circuit
Pin Descriptions
HMC476SC70
/
476SC70E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
v00.0607
Recommended Component Values for Key Application Frequencies
Component
Frequency (MHz)
50
900
1900
2200
2400
3500
5200
5800
L1
270 nH
56 nH
18 nH
18 nH
15 nH
8.2 nH
6.8 nH
3.3 nH
C1, C2
0.01 μF
100 pF
100 pF
100 pF
100 pF
100 pF
100 pF
100 pF
Supply Voltage (Vs)
5V
8V
10V
12V
R
BIAS
V
ALUE
56 Ω
130 Ω
180 Ω
240 Ω
R
BIAS
P
OWER
R
ATING
1/8 W
1/4 W
1/4 W
1/2 W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. R
BIAS
provides DC bias stability over temperature.
Recommended Bias Resistor Values
for Icc= 35 mA, Rbias= (Vs - Vcc) / Icc
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