參數(shù)資料
型號: HMC476MP86
廠商: 美國訊泰微波有限公司上海代表處
英文描述: SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz
中文描述: SiGe HBT增益塊MMIC放大器,直流- 6.0吉赫
文件頁數(shù): 4/6頁
文件大?。?/td> 207K
代理商: HMC476MP86
MICROWAVE CORPORATION
8 - 245
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
8
HMC476MP86
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6.0 GHz
v00.0603
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+6.0 Vdc
Collector Bias Current (Icc)
45 mA
RF Input Power (RFin)(Vcc = +3.0 Vdc)
+18 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 7.75 mW/°C above 85 °C)
0.504 W
Thermal Resistance
(junction to lead)
129 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
7. THE MICRO-P PACKAGE IS DIMENSIONALLY COMPATABLE WITH
THE “MICRO-X PACKAGE”
相關(guān)PDF資料
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HMC476SC70 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HMC476MP86_10 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz
HMC476MP86E 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP HBT 6GHZ MICRO-P
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HMC476SC70 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz
HMC476SC70_10 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz